IPB60R280P7ATMA1 vs IPD80R280P7ATMA1 Comparison
Detailed side-by-side comparison of IPB60R280P7ATMA1 by Infineon and IPD80R280P7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPB60R280P7ATMA1 | IPD80R280P7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.88 | $1.62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS P7 (600 V) | CoolMOS P7 |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Technology | Superjunction (SJ) | Superjunction (CoolMOS P7) |
| Drain-Source Voltage (V_DSS) | 600 V | β |
| Continuous Drain Current (I_D, T_C=25Β°C) | 12 A | β |
| On-Resistance R_DS(on) max (V_GS=10V) | 280 mOhm | β |
| Gate-Source Threshold V_GS(th) typ | 3.5 V | β |
| Power Dissipation P_D (T_C=25Β°C) | 53 W | β |
| Package | PG-TO263-3 (D2PAK) | PG-TO252-3 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 3 (2 + Tab) | β |
| Operating Temperature Range | -55 Β°C to +150 Β°C (T_j max) | β |
| Configuration | Single N-Channel | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Generation | 7th Gen CoolMOS (successor to P6) | β |
| Drain-Source Voltage (V_DS) | β | 800 V |
| Continuous Drain Current (I_D, Tc) | β | 17 A |
| R_DS(on) max at V_GS=10V | β | 280 mOhm |
| Power Dissipation (P_D, Tc) | β | 101 W |
| Gate-Source Voltage (V_GS) max | β | [DATA_NEEDED: V_GS max rating] |
| Operating Junction Temperature | β | -55C to +150C |
| ESD Protection | β | Integrated (per datasheet) |
| MSL Level | β | [DATA_NEEDED: MSL rating] |