IPB60R280P7ATMA1 vs IPD80R750P7ATMA1 Comparison
Detailed side-by-side comparison of IPB60R280P7ATMA1 by Infineon and IPD80R750P7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPB60R280P7ATMA1 | IPD80R750P7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.88 | $0.42 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS P7 (600 V) | β |
| Transistor Type | N-Channel MOSFET | β |
| Technology | Superjunction (SJ) | CoolMOS (Super-Junction) |
| Drain-Source Voltage (V_DSS) | 600 V | β |
| Continuous Drain Current (I_D, T_C=25Β°C) | 12 A | β |
| On-Resistance R_DS(on) max (V_GS=10V) | 280 mOhm | β |
| Gate-Source Threshold V_GS(th) typ | 3.5 V | β |
| Power Dissipation P_D (T_C=25Β°C) | 53 W | β |
| Package | PG-TO263-3 (D2PAK) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 3 (2 + Tab) | β |
| Operating Temperature Range | -55 Β°C to +150 Β°C (T_j max) | β |
| Configuration | Single N-Channel | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Generation | 7th Gen CoolMOS (successor to P6) | β |
| Series | β | CoolMOS P7 |
| Part Number | β | IPD80R750P7ATMA1 |
| FET Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 800 V |
| Continuous Drain Current (ID) at TC=25C | β | 7 A |
| On-Resistance (RDS(on)) max at VGS=10V | β | 750 mOhm |
| Gate Threshold Voltage (VGS(th)) | β | 3.5 V (typical) |
| Gate Charge (Qg) typ | β | [DATA_NEEDED: Qg value] |
| Power Dissipation (PD) at TC=25C | β | 51 W |
| Package / Case | β | PG-TO252-3 (DPAK) |
| Operating Temperature | β | -55C to +150C (TJ) |
| Gate Protection | β | Integrated Zener (ESD protected) |
| Packaging | β | Tape & Reel (ATMA1) |