IPB70N10S3L12ATMA1 vs BSC042NE7NS3GATMA1 Comparison

Detailed side-by-side comparison of IPB70N10S3L12ATMA1 by Infineon and BSC042NE7NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC042NE7NS3GATMA1

BSC042NE7NS3GATMA1 - 75V N-Ch OptiMOS 3 MOSFET | Infineon

BSC042NE7NS3GATMA1 βœ“ Active

Specification Comparison

Parameter IPB70N10S3L12ATMA1 BSC042NE7NS3GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.65 $1.24
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS (IPB70N10) β€”
Transistor Type N-Channel MOSFET, Enhancement Mode N-Channel MOSFET
Drain-Source Voltage (VDS) 100 V 75 V
Continuous Drain Current (ID) at TC=25Β°C 70 A β€”
Peak Drain Current (IDM) 180 A β€”
On-Resistance RDS(on) max at VGS=10V 11.8 mΞ© β€”
Power Dissipation (PD) at TC=25Β°C 125 W β€”
Operating Junction Temperature -55 Β°C to +175 Β°C β€”
Package / Case PG-TO263-3-2 (D2PAK, 2 Leads + Tab) β€”
Mounting Type Surface Mount Surface Mount
Automotive Qualification AEC-Q101 Qualified β€”
MSL (Moisture Sensitivity Level) MSL1 (up to 260 Β°C peak reflow) β€”
RoHS / Green RoHS Compliant, Green Product β€”
Avalanche Tested 100 % Avalanche Tested β€”
Halogen-Free Yes β€”
Part Number β€” BSC042NE7NS3GATMA1
Technology β€” OptiMOS 3
Continuous Drain Current (ID) at Ta β€” 19 A
Continuous Drain Current (ID) at Tc β€” 100 A
RDS(on) max at VGS=10V β€” 4.2 mOhm
Gate-Source Voltage (VGS) max β€” +/-20 V
Gate Threshold Voltage (VGS(th)) typ β€” 1.7 V
Power Dissipation (PD) at Ta β€” 2.5 W
Power Dissipation (PD) at Tc β€” 125 W
Operating Temperature Range β€” -55C to +150C
Package β€” PG-TDSON-8-1 (SuperSO8 5x6 mm)
MSL Level β€” 1
RoHS Status β€” Compliant

Datasheets & Resources

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