IPB90N06S4L04ATMA2 vs IPD031N03LGATMA1 Comparison
Detailed side-by-side comparison of IPB90N06S4L04ATMA2 by Infineon and IPD031N03LGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD031N03LGATMA1 - 30V 90A OptiMOS 3 N-Channel MOSFET | Infineon
IPD031N03LGATMA1 β ActiveSpecification Comparison
| Parameter | IPB90N06S4L04ATMA2 | IPD031N03LGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.94 | $0.41 |
| Manufacturer | Infineon Technologies | β |
| Part Number | IPB90N06S4L04ATMA2 | β |
| Technology | OptiMOS T2, N-channel enhancement mode | MOSFET (Metal Oxide), OptiMOS 3 |
| Drain-Source Voltage (V_DSS) | 60 V | β |
| Continuous Drain Current (I_D, Tc) | 90 A | β |
| Pulsed Drain Current (I_D,pulse) | 360 A | β |
| Power Dissipation (P_D, Tc) | 150 W | β |
| On-State Resistance R_DS(on) (typ @ VGS=10V) | 3.4 mΞ© | β |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th)] | β |
| Gate-Source Voltage (V_GS) | Β±20 V | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C | β |
| Package | PG-TO263-3-2 (D2PAK) | PG-TO252-3-11 (DPAK-2) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL1 (unlimited floor life) | 1 |
| Peak Reflow Temperature | 260 Β°C | β |
| AEC-Q101 Qualification | Qualified (automotive grade) | β |
| Avalanche Tested | 100% avalanche-tested | β |
| RoHS / Halogen-Free | Yes (Green Product) | β |
| FET Type | β | N-Channel |
| Drain-to-Source Voltage (Vdss) | β | 30 V |
| Continuous Drain Current (Id) @ 25 Β°C | β | 90 A (Tc) |
| Power Dissipation (Pd) | β | 94 W (Tc) |
| RDS(on) Max @ VGS=10V | β | 3.1 mΞ© |
| RDS(on) Max @ VGS=4.5V | β | [DATA_NEEDED: RDS(on) @ 4.5V] |
| Gate Threshold Voltage (Vgs(th)) | β | [DATA_NEEDED: Vgs(th) typical/max] |
| Drive Voltage (Max RDS(on), Min RDS(on)) | β | 4.5 V, 10 V |
| Gate Charge (Qg) | β | [DATA_NEEDED: Qg typical @ 10V Vgs] |
| Output Charge (Qoss) | β | Ultra low (per datasheet tagline) |
| Operating Temperature | β | -55 Β°C to +175 Β°C (junction) |
| Mounting Tab | β | Drain (electrically connected) |
| Avalanche Energy Rated | β | Yes (per OptiMOS 3 datasheet family) |
| RoHS Status | β | Compliant |