IPC100N04S51R7ATMA1 vs IAUC100N04S6N022ATMA1 Comparison
Detailed side-by-side comparison of IPC100N04S51R7ATMA1 by Infineon and IAUC100N04S6N022ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPC100N04S51R7ATMA1
IPC100N04S51R7ATMA1 - 40V 100A OptiMOS-5 N-FET | Infineon
IPC100N04S51R7ATMA1 β ActiveInfineon
IAUC100N04S6N022ATMA1
IAUC100N04S6N022ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
IAUC100N04S6N022ATMA1 β ActiveSpecification Comparison
| Parameter | IPC100N04S51R7ATMA1 | IAUC100N04S6N022ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.82 | $0.82 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS-5 | β |
| Transistor Type | N-Channel MOSFET, Enhancement Mode | β |
| Drain-Source Voltage VDS | 40 V | β |
| Continuous Drain Current ID | 100 A (at TC) | β |
| Pulsed Drain Current IDM | [DATA_NEEDED: pulsed drain current] | β |
| Gate-Source Voltage VGS | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) value] | β |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) at VGS=10V] | β |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | β |
| Power Dissipation PD | 115 W (at TC) | β |
| Thermal Resistance RthJC | 1.3 K/W | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | PG-TDSON-8-34 (SS08 leadless) | PG-TDSON-8 (5x6 mm) leadless |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL1 (260 Β°C peak reflow) | 1 (per JEDEC J-STD-020) |
| AEC-Q101 Qualified | Yes | β |
| Avalanche Tested | 100% tested | β |
| RoHS Status | Compliant (Green Product) | Compliant |
| Built-in Body Diode | Yes | β |
| Technology | β | OptiMOS 6, N-Channel MOSFET |
| Drain-Source Voltage (V_DSS) | β | 40 V |
| Continuous Drain Current (I_D, Tc) | β | 100 A |
| Power Dissipation (P_D, Tc) | β | 75 W |
| R_DS(on) (typ at V_GS=10V) | β | 2.2 mOhm |
| Operating Temperature Range | β | -55C to +175C (junction) |
| Polarity | β | N-Channel enhancement mode |
| Automotive Qualification | β | AEC-Q100 (IAUC family) |
| Pin Count | β | 8 |
| Gate Threshold V_GS(th) | β | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge Q_g | β | [DATA_NEEDED: total gate charge] |
| Lead-Free | β | Yes |