IPC100N04S51R7ATMA1 vs IPD053N06NATMA1 Comparison
Detailed side-by-side comparison of IPC100N04S51R7ATMA1 by Infineon and IPD053N06NATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPC100N04S51R7ATMA1
IPC100N04S51R7ATMA1 - 40V 100A OptiMOS-5 N-FET | Infineon
IPC100N04S51R7ATMA1 β Active
Specification Comparison
| Parameter | IPC100N04S51R7ATMA1 | IPD053N06NATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.82 | $0.52 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS-5 | β |
| Transistor Type | N-Channel MOSFET, Enhancement Mode | β |
| Drain-Source Voltage VDS | 40 V | β |
| Continuous Drain Current ID | 100 A (at TC) | β |
| Pulsed Drain Current IDM | [DATA_NEEDED: pulsed drain current] | β |
| Gate-Source Voltage VGS | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) value] | β |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) at VGS=10V] | β |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | β |
| Power Dissipation PD | 115 W (at TC) | β |
| Thermal Resistance RthJC | 1.3 K/W | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | PG-TDSON-8-34 (SS08 leadless) | PG-TO252-3 (DPAK-2), Surface Mount |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL1 (260 Β°C peak reflow) | β |
| AEC-Q101 Qualified | Yes | β |
| Avalanche Tested | 100% tested | β |
| RoHS Status | Compliant (Green Product) | Compliant |
| Built-in Body Diode | Yes | β |
| Product Series | β | OptiMOS 5 60V |
| Transistor Polarity | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 60 V |
| Gate-Source Voltage (VGS) | β | +/- 20 V |
| Continuous Drain Current (ID, Tc) | β | 45 A |
| Continuous Drain Current (ID, Ta) | β | 18 A |
| On-State Resistance (RDS(on), max) | β | 5.3 mOhm @ VGS=10V |
| Power Dissipation (Tc) | β | 83 W |
| Power Dissipation (Ta) | β | 3 W |
| Operating Temperature Range | β | -55C to +175C (Tj) [DATA_NEEDED: precise operating range min/max from datasheet] |
| Technology | β | OptiMOS 5 trench MOSFET |