IPC100N04S51R7ATMA1 vs IPD80R280P7ATMA1 Comparison
Detailed side-by-side comparison of IPC100N04S51R7ATMA1 by Infineon and IPD80R280P7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPC100N04S51R7ATMA1
IPC100N04S51R7ATMA1 - 40V 100A OptiMOS-5 N-FET | Infineon
IPC100N04S51R7ATMA1 β Active
Specification Comparison
| Parameter | IPC100N04S51R7ATMA1 | IPD80R280P7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.82 | $1.62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS-5 | β |
| Transistor Type | N-Channel MOSFET, Enhancement Mode | N-Channel MOSFET |
| Drain-Source Voltage VDS | 40 V | β |
| Continuous Drain Current ID | 100 A (at TC) | β |
| Pulsed Drain Current IDM | [DATA_NEEDED: pulsed drain current] | β |
| Gate-Source Voltage VGS | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) value] | β |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) at VGS=10V] | β |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | β |
| Power Dissipation PD | 115 W (at TC) | β |
| Thermal Resistance RthJC | 1.3 K/W | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | -55C to +150C |
| Package | PG-TDSON-8-34 (SS08 leadless) | PG-TO252-3 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL1 (260 Β°C peak reflow) | [DATA_NEEDED: MSL rating] |
| AEC-Q101 Qualified | Yes | β |
| Avalanche Tested | 100% tested | β |
| RoHS Status | Compliant (Green Product) | Compliant |
| Built-in Body Diode | Yes | β |
| Product Family | β | CoolMOS P7 |
| Technology | β | Superjunction (CoolMOS P7) |
| Drain-Source Voltage (V_DS) | β | 800 V |
| Continuous Drain Current (I_D, Tc) | β | 17 A |
| R_DS(on) max at V_GS=10V | β | 280 mOhm |
| Power Dissipation (P_D, Tc) | β | 101 W |
| Gate-Source Voltage (V_GS) max | β | [DATA_NEEDED: V_GS max rating] |
| ESD Protection | β | Integrated (per datasheet) |
| Lead-Free | β | Yes |