IPC100N04S5L1R5ATMA1 vs IAUA180N04S5N012AUMA1 Comparison
Detailed side-by-side comparison of IPC100N04S5L1R5ATMA1 by Infineon and IAUA180N04S5N012AUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPC100N04S5L1R5ATMA1
IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon
IPC100N04S5L1R5ATMA1 β ActiveInfineon
IAUA180N04S5N012AUMA1
IAUA180N04S5N012AUMA1 - 40V 180A OptiMOS-5 N-MOSFET | Infineon
IAUA180N04S5N012AUMA1 β ActiveSpecification Comparison
| Parameter | IPC100N04S5L1R5ATMA1 | IAUA180N04S5N012AUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.18 | $1.96 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-5 40 V | β |
| Polarity / Channel Type | N-Channel, Enhancement Mode | β |
| Drain-Source Voltage (VDS) Max | 40 V | β |
| Gate-Source Voltage (VGS) Max | 20 V | β |
| Continuous Drain Current (ID) at Tc=25C | 100 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | β |
| Power Dissipation (PD) at Tc=25C | 115 W | β |
| On-Resistance RDS(on) at VGS=10 V | 1.5 mOhm (typ) | β |
| On-Resistance RDS(on) at VGS=4.5 V | 1.8 mOhm (typ) | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ] | β |
| Operating Temperature Range | -55C to +175C | -55 Β°C to +175 Β°C (Tj) |
| Package | PG-TDSON-8-34 (SS08 leadless) | PG-HSOF-5-2 (sTOLL, MO-319A / HSOF-5), 7x8 mmΒ² |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL1 (260C peak reflow) | β |
| AEC-Q101 Qualified | Yes | β |
| RoHS Status | Compliant (Green Product) | Compliant |
| Avalanche Tested | 100% | β |
| Part Number | β | IAUA180N04S5N012AUMA1 |
| Series | β | OptiMOS-5 40 V |
| FET Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID) | β | 180 A (Tc) |
| Maximum Power Dissipation (PD) | β | 125 W (Tc) |
| R_DS(on) (max) | β | 1.2 mΞ© at 10 V VGS |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Technology | β | OptiMOS-5 Trench |
| Automotive Qualification | β | AEC-Q101 |