IPC100N04S5L1R5ATMA1 vs IAUA210N10S5N024AUMA1 Comparison
Detailed side-by-side comparison of IPC100N04S5L1R5ATMA1 by Infineon and IAUA210N10S5N024AUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon
IPC100N04S5L1R5ATMA1 β ActiveInfineon
IAUA210N10S5N024AUMA1 - 100V 2.4mΞ© 210A OptiMOS 5 MOSFET | Infineon
IAUA210N10S5N024AUMA1 β ActiveSpecification Comparison
| Parameter | IPC100N04S5L1R5ATMA1 | IAUA210N10S5N024AUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.18 | $1.65 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-5 40 V | OptiMOS 5 |
| Polarity / Channel Type | N-Channel, Enhancement Mode | β |
| Drain-Source Voltage (VDS) Max | 40 V | β |
| Gate-Source Voltage (VGS) Max | 20 V | β |
| Continuous Drain Current (ID) at Tc=25C | 100 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | β |
| Power Dissipation (PD) at Tc=25C | 115 W | β |
| On-Resistance RDS(on) at VGS=10 V | 1.5 mOhm (typ) | β |
| On-Resistance RDS(on) at VGS=4.5 V | 1.8 mOhm (typ) | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ] | β |
| Operating Temperature Range | -55C to +175C | -55Β°C to +175Β°C (TJ) |
| Package | PG-TDSON-8-34 (SS08 leadless) | PG-HSOF-5-4 (7Γ8 mmΒ² sTOLL) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL1 (260C peak reflow) | [DATA_NEEDED: MSL rating] |
| AEC-Q101 Qualified | Yes | β |
| RoHS Status | Compliant (Green Product) | Compliant |
| Avalanche Tested | 100% | β |
| Technology | β | MOSFET (Metal Oxide), N-Channel |
| Drain-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID) @ Tj | β | 210 A |
| Continuous Drain Current (ID) @ TC=25Β°C | β | [DATA_NEEDED: ID at TC=25Β°C] |
| On-Resistance RDS(on) Max @ VGS=10V | β | 2.4 mΞ© |
| Gate Threshold Voltage VGS(th) | β | [DATA_NEEDED: typical VGS(th) value] |
| Gate Charge Qg (typ) | β | [DATA_NEEDED: Qg typ @ VGS=10V] |
| Power Dissipation (PD) @ TC=25Β°C | β | 238 W |
| Automotive Qualification | β | AEC-Q101 |
| Lead-Free | β | Yes |
| Avalanche Energy Rated | β | Yes (per datasheet) |