IPC50N04S5L5R5ATMA1 vs IAUC50N08S5N102ATMA1 Comparison
Detailed side-by-side comparison of IPC50N04S5L5R5ATMA1 by Infineon and IAUC50N08S5N102ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPC50N04S5L5R5ATMA1 - 40V 50A 5.5mΞ© OptiMOS Auto MOSFET | Infineon
IPC50N04S5L5R5ATMA1 β ActiveInfineon
IAUC50N08S5N102ATMA1 - 80V 50A OptiMOS 5 N-MOSFET | Infineon
IAUC50N08S5N102ATMA1 β ActiveSpecification Comparison
| Parameter | IPC50N04S5L5R5ATMA1 | IAUC50N08S5N102ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.36 | $0.51 |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Mode | Enhancement Mode | β |
| Drain-Source Voltage (VDS) | 40 V | 80 V |
| Continuous Drain Current (ID, Tc) | 50 A | β |
| Maximum Drain Current (silicon-limited, 25 Β°C) | 60 A | β |
| On-Resistance RDS(on) max @ VGS=10 V | 5.5 mΞ© | β |
| Gate Threshold VGS(th) | Logic Level (enhancement at β€ 4.5 V VGS) | β |
| Power Dissipation (Tc) | 42 W | β |
| Thermal Resistance Junction-to-Case RthJC | 3.6 K/W | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C | -55Β°C to +175Β°C |
| Package | PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad) | β |
| Mounting Type | Surface Mount | Surface Mount |
| AEC-Q101 Qualification | Qualified (automotive grade) | β |
| MSL (Moisture Sensitivity Level) | MSL1 | β |
| Peak Reflow Temperature | 260 Β°C | β |
| Avalanche Rating | 100 % Avalanche Tested | β |
| RoHS / REACH | RoHS Compliant (Green Product) | β |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS 5 |
| Continuous Drain Current (ID) at TC=25Β°C | β | 50 A |
| On-Resistance (RDS(on)) | β | 10.2 mΞ© @ 25 A, 10 V |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical value] |
| Gate-Source Voltage (VGS) Max | β | Β±20 V |
| Total Gate Charge (Qg) | β | 21 nC @ 10 V |
| Input Capacitance (Ciss) | β | 1394 pF @ 40 V |
| Power Dissipation (PD) at TC=25Β°C | β | 60 W |
| Package / Case | β | PG-TDSON-8-33 |
| Qualification | β | AEC-Q101 |
| RoHS Status | β | Compliant |
| MSL Level | β | [DATA_NEEDED: MSL rating] |