IPC70N04S5L4R2ATMA1 vs BSC019N08NS5ATMA1 Comparison
Detailed side-by-side comparison of IPC70N04S5L4R2ATMA1 by Infineon and BSC019N08NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPC70N04S5L4R2ATMA1 - 40V 70A OptiMOS 5 N-Ch MOSFET | Infineon
IPC70N04S5L4R2ATMA1 β ActiveInfineon
BSC019N08NS5ATMA1 - 80V 237A 1.9mOhm OptiMOS 5 MOSFET | Infineon
BSC019N08NS5ATMA1 β ActiveSpecification Comparison
| Parameter | IPC70N04S5L4R2ATMA1 | BSC019N08NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.78 | $1.78 |
| FET Type | N-Channel | β |
| Technology | MOSFET (Metal Oxide) | OptiMOS 5 (N-channel trench) |
| Drain to Source Voltage (Vdss) | 40 V | β |
| Continuous Drain Current (Id) @ Tc=25Β°C | 70 A | β |
| Power Dissipation (Pd) @ Tc=25Β°C | 50 W | β |
| R_DS(on) Max @ Vgs=10V | 4.2 mΞ© (typ) | β |
| Gate Threshold (Vgs(th)) | Logic Level (4.5 V max Rds On, Min Rds On) | β |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V | β |
| Package | PG-TDSON-8-34 (Surface Mount) | PG-TSON-8-3 (SuperSO8 5x6 mm) |
| Operating Temperature (Tj) | -55Β°C to +175Β°C | β |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL1 (up to 260Β°C peak reflow) | 1 |
| Automotive Qualification | AEC-Q101 | β |
| Avalanche Tested | 100% (60 A production test) | β |
| RoHS Status | Compliant (Green Product) | Compliant |
| Configuration | Single with Built-in Diode | β |
| Case Connection | DRAIN | β |
| Manufacturer | β | Infineon Technologies |
| Polarity | β | N-Channel |
| Drain-Source Voltage (VDS) max | β | 80 V |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Continuous Drain Current (ID) at TA=25C | β | 28 A |
| Continuous Drain Current (ID) at TC=25C | β | 237 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) max at VGS=10V | β | 1.9 mOhm |
| Gate Threshold Voltage VGS(th) typ | β | 3.0 V |
| Total Gate Charge Qg | β | [DATA_NEEDED: total gate charge Qg] |
| Power Dissipation (TA=25C) | β | 3 W |
| Power Dissipation (TC=25C) | β | 214 W |
| Operating Temperature Range | β | -55 C to +150 C |
| Avalanche Rated | β | Yes |