IPC70N04S5L4R2ATMA1 vs IPB100N04S4H2ATMA1 Comparison
Detailed side-by-side comparison of IPC70N04S5L4R2ATMA1 by Infineon and IPB100N04S4H2ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPC70N04S5L4R2ATMA1 - 40V 70A OptiMOS 5 N-Ch MOSFET | Infineon
IPC70N04S5L4R2ATMA1 β ActiveInfineon
IPB100N04S4H2ATMA1 - 40V 100A OptiMOS-T2 N-Channel MOSFET | Infineon
IPB100N04S4H2ATMA1 β ActiveSpecification Comparison
| Parameter | IPC70N04S5L4R2ATMA1 | IPB100N04S4H2ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.78 | $1.42 |
| FET Type | N-Channel | N-Channel, Enhancement Mode |
| Technology | MOSFET (Metal Oxide) | OptiMOS-T2 (trench gate) |
| Drain to Source Voltage (Vdss) | 40 V | β |
| Continuous Drain Current (Id) @ Tc=25Β°C | 70 A | β |
| Power Dissipation (Pd) @ Tc=25Β°C | 50 W | β |
| R_DS(on) Max @ Vgs=10V | 4.2 mΞ© (typ) | β |
| Gate Threshold (Vgs(th)) | Logic Level (4.5 V max Rds On, Min Rds On) | β |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V | β |
| Package | PG-TDSON-8-34 (Surface Mount) | PG-TO263-3-2 (D2PAK-2) Surface Mount |
| Operating Temperature (Tj) | -55Β°C to +175Β°C | β |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL1 (up to 260Β°C peak reflow) | MSL1 (up to 260C peak reflow) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified |
| Avalanche Tested | 100% (60 A production test) | β |
| RoHS Status | Compliant (Green Product) | β |
| Configuration | Single with Built-in Diode | β |
| Case Connection | DRAIN | β |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID) at TC=25C | β | 100 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) | β | [DATA_NEEDED: max VGS rating] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical] |
| RDS(on) at VGS=10V | β | 2.4 mΞ© typical |
| Maximum Power Dissition (PD) at TC=25C | β | 115 W |
| Operating Junction Temperature | β | -55C to +175C |
| Storage Temperature | β | [DATA_NEEDED: storage temp range] |
| Avalanche Energy (EAS) | β | 100% avalanche tested |
| RoHS Compliance | β | Compliant (Green Product) |