IPC70N04S5L4R2ATMA1 vs IPC100N04S52R8ATMA1 Comparison
Detailed side-by-side comparison of IPC70N04S5L4R2ATMA1 by Infineon and IPC100N04S52R8ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPC70N04S5L4R2ATMA1
IPC70N04S5L4R2ATMA1 - 40V 70A OptiMOS 5 N-Ch MOSFET | Infineon
IPC70N04S5L4R2ATMA1 β ActiveInfineon
IPC100N04S52R8ATMA1
IPC100N04S52R8ATMA1 - 40V 100A N-Ch OptiMOS MOSFET | Infineon
IPC100N04S52R8ATMA1 β ActiveSpecification Comparison
| Parameter | IPC70N04S5L4R2ATMA1 | IPC100N04S52R8ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.78 | $1.18 |
| FET Type | N-Channel | β |
| Technology | MOSFET (Metal Oxide) | β |
| Drain to Source Voltage (Vdss) | 40 V | β |
| Continuous Drain Current (Id) @ Tc=25Β°C | 70 A | β |
| Power Dissipation (Pd) @ Tc=25Β°C | 50 W | β |
| R_DS(on) Max @ Vgs=10V | 4.2 mΞ© (typ) | β |
| Gate Threshold (Vgs(th)) | Logic Level (4.5 V max Rds On, Min Rds On) | β |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V | β |
| Package | PG-TDSON-8-34 (Surface Mount) | PG-TDSON-8-34 (TDSON-8 EP) |
| Operating Temperature (Tj) | -55Β°C to +175Β°C | β |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL1 (up to 260Β°C peak reflow) | 1 (260C peak reflow) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified |
| Avalanche Tested | 100% (60 A production test) | 100% (per Infineon standard) |
| RoHS Status | Compliant (Green Product) | β |
| Configuration | Single with Built-in Diode | β |
| Case Connection | DRAIN | β |
| Polarity | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID, Tc=25C) | β | 100 A |
| Continuous Drain Current (ID, Tc=100C) | β | [DATA_NEEDED: ID at Tc=100C] |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) | β | [DATA_NEEDED: VGS max] |
| Gate Threshold Voltage (VGS(th), typ) | β | [DATA_NEEDED: VGS(th) typical] |
| On-State Resistance RDS(on) typ @ VGS=10V | β | 2.8 mOhm |
| On-State Resistance RDS(on) max @ VGS=10V | β | [DATA_NEEDED: RDS(on) max] |
| Power Dissipation (PD, Tc=25C) | β | 75 W |
| Operating Junction Temperature | β | -55C to +175C |
| RoHS / Green Product | β | Yes (RoHS compliant) |