IPC90N04S5L3R3ATMA1 vs BSC027N10NS5ATMA1 Comparison
Detailed side-by-side comparison of IPC90N04S5L3R3ATMA1 by Infineon and BSC027N10NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPC90N04S5L3R3ATMA1
IPC90N04S5L3R3ATMA1 - 40V 90A OptiMOS N-Channel MOSFET | Infineon
IPC90N04S5L3R3ATMA1 β ActiveInfineon
BSC027N10NS5ATMA1
BSC027N10NS5ATMA1 - 100V 194A OptiMOS 5 N-MOSFET | Infineon
BSC027N10NS5ATMA1 NrndSpecification Comparison
| Parameter | IPC90N04S5L3R3ATMA1 | BSC027N10NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Nrnd |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.96 | $1.10 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 40V | β |
| FET Type | N-Channel, Enhancement Mode | β |
| Drain-Source Voltage (VDS) | 40 V | 100 V |
| Continuous Drain Current (ID) at TC=25Β°C | 90 A | β |
| On-Resistance RDS(on) max at VGS=10V | 3.3 mΞ© | β |
| On-Resistance RDS(on) at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | β |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| Gate Threshold Voltage VGS(th) | 1.7 V to 2.7 V (logic level) | β |
| Total Power Dissipation (TC=25Β°C) | 62 W | β |
| Operating Junction Temperature | -55Β°C to +175Β°C | β |
| Storage Temperature Range | [DATA_NEEDED: storage temp range] | β |
| Package | PG-TDSON-8-34 (TDSON-8) | PG-TSON-8-3 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Moisture Sensitivity | MSL1 (per JEDEC J-STD-020) | β |
| Peak Reflow Temperature | 260Β°C | β |
| Qualification | AEC-Q101 automotive qualified | Industrial (AEC-Q101 variant BSC027N10NS5 exists separately) |
| Avalanche Tested | 100% (production-level) | β |
| RoHS Compliance | Compliant (Green Product) | β |
| Part Number | β | BSC027N10NS5ATMA1 |
| Technology | β | OptiMOS 5 (100V) |
| Channel Type | β | N-Channel |
| Gate-Source Voltage (VGS) Max | β | [DATA_NEEDED: VGS max rating] |
| Continuous Drain Current (ID) at Ta | β | 23 A |
| Continuous Drain Current (ID) at Tc | β | 100 A |
| Pulsed Drain Current (IDM) | β | 194 A |
| On-Resistance RDS(on) Max at VGS=10V | β | 2.7 mOhm |
| Power Dissipation (Ta) | β | 3 W |
| Power Dissipation (Tc) | β | 214 W |
| Operating Temperature Range | β | [DATA_NEEDED: Tj min/max] |
| RoHS Status | β | Compliant |
| MSL Level | β | [DATA_NEEDED: MSL rating] |