IPC90N04S5L3R3ATMA1 vs IPD068P03L3GATMA1 Comparison
Detailed side-by-side comparison of IPC90N04S5L3R3ATMA1 by Infineon and IPD068P03L3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPC90N04S5L3R3ATMA1
IPC90N04S5L3R3ATMA1 - 40V 90A OptiMOS N-Channel MOSFET | Infineon
IPC90N04S5L3R3ATMA1 β Active
Specification Comparison
| Parameter | IPC90N04S5L3R3ATMA1 | IPD068P03L3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.96 | $0.51 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 40V | OptiMOS P-Channel Power MOSFET |
| FET Type | N-Channel, Enhancement Mode | β |
| Drain-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID) at TC=25Β°C | 90 A | β |
| On-Resistance RDS(on) max at VGS=10V | 3.3 mΞ© | β |
| On-Resistance RDS(on) at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | β |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| Gate Threshold Voltage VGS(th) | 1.7 V to 2.7 V (logic level) | β |
| Total Power Dissipation (TC=25Β°C) | 62 W | β |
| Operating Junction Temperature | -55Β°C to +175Β°C | β |
| Storage Temperature Range | [DATA_NEEDED: storage temp range] | β |
| Package | PG-TDSON-8-34 (TDSON-8) | PG-TO252-3 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Moisture Sensitivity | MSL1 (per JEDEC J-STD-020) | β |
| Peak Reflow Temperature | 260Β°C | β |
| Qualification | AEC-Q101 automotive qualified | β |
| Avalanche Tested | 100% (production-level) | β |
| RoHS Compliance | Compliant (Green Product) | β |
| Polarity / Channel Type | β | P-Channel |
| Drain-Source Voltage (V_DS) | β | -30 V |
| Continuous Drain Current (I_D) at T_C | β | -70 A |
| Pulsed Drain Current (I_D,pulse) | β | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (P_D) at T_C | β | 100 W |
| R_DS(on) max at V_GS=-10V | β | 0.005 ohm (typical) |
| Gate-Source Threshold Voltage (V_GS(th)) | β | -1.0 V to -2.2 V |
| Gate Charge (Q_g) | β | [DATA_NEEDED: total gate charge] |
| Operating Temperature Range | β | -55C to +175C (junction) |
| Channel Mode | β | Enhancement |
| RoHS Status | β | Compliant |
| MSL Level | β | 1 (unlimited floor life at <30C/85% RH) |
| Technology | β | Trench MOSFET (OptiMOS) |