IPC90N04S5L3R3ATMA1 vs IPD90N04S403ATMA1 Comparison
Detailed side-by-side comparison of IPC90N04S5L3R3ATMA1 by Infineon and IPD90N04S403ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPC90N04S5L3R3ATMA1
IPC90N04S5L3R3ATMA1 - 40V 90A OptiMOS N-Channel MOSFET | Infineon
IPC90N04S5L3R3ATMA1 β Active
Specification Comparison
| Parameter | IPC90N04S5L3R3ATMA1 | IPD90N04S403ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.96 | $1.05 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 40V | OptiMOS-T2 |
| FET Type | N-Channel, Enhancement Mode | β |
| Drain-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID) at TC=25Β°C | 90 A | β |
| On-Resistance RDS(on) max at VGS=10V | 3.3 mΞ© | β |
| On-Resistance RDS(on) at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | β |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| Gate Threshold Voltage VGS(th) | 1.7 V to 2.7 V (logic level) | β |
| Total Power Dissipation (TC=25Β°C) | 62 W | β |
| Operating Junction Temperature | -55Β°C to +175Β°C | -55C to +175C |
| Storage Temperature Range | [DATA_NEEDED: storage temp range] | β |
| Package | PG-TDSON-8-34 (TDSON-8) | PG-TO252-3-313 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Moisture Sensitivity | MSL1 (per JEDEC J-STD-020) | β |
| Peak Reflow Temperature | 260Β°C | β |
| Qualification | AEC-Q101 automotive qualified | β |
| Avalanche Tested | 100% (production-level) | 100% avalanche-tested |
| RoHS Compliance | Compliant (Green Product) | Compliant (Green Package) |
| Channel Type | β | N-Channel |
| Drain-Source Voltage (V_DS) | β | 40 V |
| Continuous Drain Current (I_D, Tc) | β | 90 A |
| On-State Resistance (R_DS(on)) | β | 3.2 mOhm typical at V_GS = 10 V |
| Maximum Power Dissipation (P_D, Tc=25C) | β | 94 W |
| Gate Threshold Voltage (V_GS(th)) | β | [DATA_NEEDED: gate threshold voltage] |
| MSL Level | β | MSL1 (peak reflow up to 260C) |
| AEC-Q101 Qualification | β | Qualified (automotive grade) |
| Technology | β | Trench MOSFET (OptiMOS-T2) |