IPD031N03LGATMA1 vs BSC014N04LSATMA1 Comparison
Detailed side-by-side comparison of IPD031N03LGATMA1 by Infineon and BSC014N04LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD031N03LGATMA1 - 30V 90A OptiMOS 3 N-Channel MOSFET | Infineon
IPD031N03LGATMA1 β ActiveInfineon
BSC014N04LSATMA1
BSC014N04LSATMA1 - 40V 1.4mOhm OptiMOS 5 N-Ch MOSFET | Infineon
BSC014N04LSATMA1 β ActiveSpecification Comparison
| Parameter | IPD031N03LGATMA1 | BSC014N04LSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.41 | $0.74 |
| FET Type | N-Channel | β |
| Technology | MOSFET (Metal Oxide), OptiMOS 3 | Trench (OptiMOS 5, thin-wafer) |
| Drain-to-Source Voltage (Vdss) | 30 V | β |
| Continuous Drain Current (Id) @ 25 Β°C | 90 A (Tc) | β |
| Power Dissipation (Pd) | 94 W (Tc) | β |
| RDS(on) Max @ VGS=10V | 3.1 mΞ© | β |
| RDS(on) Max @ VGS=4.5V | [DATA_NEEDED: RDS(on) @ 4.5V] | β |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical/max] | β |
| Drive Voltage (Max RDS(on), Min RDS(on)) | 4.5 V, 10 V | β |
| Gate Charge (Qg) | [DATA_NEEDED: Qg typical @ 10V Vgs] | β |
| Output Charge (Qoss) | Ultra low (per datasheet tagline) | β |
| Operating Temperature | -55 Β°C to +175 Β°C (junction) | β |
| Package | PG-TO252-3-11 (DPAK-2) | SuperSO8 (TDSON-8 FL) 5x6 mm |
| Mounting Type | Surface Mount | Surface Mount |
| Mounting Tab | Drain (electrically connected) | β |
| Avalanche Energy Rated | Yes (per OptiMOS 3 datasheet family) | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | 1 (unlimited) |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS 5 |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID) at Ta | β | 32 A |
| Continuous Drain Current (ID) at Tc | β | 100 A |
| RDS(on) max at VGS=10 V | β | 1.4 mOhm |
| Power Dissipation at Ta | β | 2.5 W |
| Power Dissipation at Tc | β | 96 W |
| Gate-Source Voltage (VGS) max | β | 20 V |
| Operating Temperature Range | β | -55C to +175C |