IPD031N03LGATMA1 vs BSC0501NSIATMA1 Comparison
Detailed side-by-side comparison of IPD031N03LGATMA1 by Infineon and BSC0501NSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD031N03LGATMA1 - 30V 90A OptiMOS 3 N-Channel MOSFET | Infineon
IPD031N03LGATMA1 β ActiveInfineon
BSC0501NSIATMA1
BSC0501NSIATMA1 - 30V N-Ch OptiMOS 5 MOSFET 100A | Infineon
BSC0501NSIATMA1 β ActiveSpecification Comparison
| Parameter | IPD031N03LGATMA1 | BSC0501NSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.41 | $0.65 |
| FET Type | N-Channel | β |
| Technology | MOSFET (Metal Oxide), OptiMOS 3 | Trench-gate OptiMOS 5 |
| Drain-to-Source Voltage (Vdss) | 30 V | β |
| Continuous Drain Current (Id) @ 25 Β°C | 90 A (Tc) | β |
| Power Dissipation (Pd) | 94 W (Tc) | β |
| RDS(on) Max @ VGS=10V | 3.1 mΞ© | β |
| RDS(on) Max @ VGS=4.5V | [DATA_NEEDED: RDS(on) @ 4.5V] | β |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical/max] | β |
| Drive Voltage (Max RDS(on), Min RDS(on)) | 4.5 V, 10 V | β |
| Gate Charge (Qg) | [DATA_NEEDED: Qg typical @ 10V Vgs] | β |
| Output Charge (Qoss) | Ultra low (per datasheet tagline) | β |
| Operating Temperature | -55 Β°C to +175 Β°C (junction) | β |
| Package | PG-TO252-3-11 (DPAK-2) | PG-TDSON-8-6 (SuperSO8) |
| Mounting Type | Surface Mount | Surface Mount |
| Mounting Tab | Drain (electrically connected) | β |
| Avalanche Energy Rated | Yes (per OptiMOS 3 datasheet family) | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | 1 (per JEDEC J-STD-020) |
| Manufacturer | β | Infineon |
| Product Family | β | OptiMOS 5 25V/30V |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 30 V |
| Continuous Drain Current (ID) at Ta | β | 29 A |
| Continuous Drain Current (ID) at Tc | β | 100 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM] |
| Power Dissipation at Ta (PD) | β | 2.5 W |
| Power Dissipation at Tc (PD) | β | 50 W |
| Gate-Source Voltage (VGS) | β | Β±20 V |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical] |
| On-Resistance (RDS(on)) | β | [DATA_NEEDED: RDS(on) max at 10V VGS] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg typical] |
| Operating Junction Temperature | β | -55C to +150C |
| Avalanche Rated | β | Yes |