IPD031N03LGATMA1 vs IPB021N10NM5LF2ATMA1 Comparison
Detailed side-by-side comparison of IPD031N03LGATMA1 by Infineon and IPB021N10NM5LF2ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD031N03LGATMA1 - 30V 90A OptiMOS 3 N-Channel MOSFET | Infineon
IPD031N03LGATMA1 β ActiveInfineon
IPB021N10NM5LF2ATMA1 - 100V 2.1mΞ© Linear FET MOSFET | Infineon
IPB021N10NM5LF2ATMA1 β ActiveSpecification Comparison
| Parameter | IPD031N03LGATMA1 | IPB021N10NM5LF2ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.41 | $2.75 |
| FET Type | N-Channel | β |
| Technology | MOSFET (Metal Oxide), OptiMOS 3 | OptiMOS 5 trench-gate MOSFET (Linear FET optimized) |
| Drain-to-Source Voltage (Vdss) | 30 V | β |
| Continuous Drain Current (Id) @ 25 Β°C | 90 A (Tc) | β |
| Power Dissipation (Pd) | 94 W (Tc) | β |
| RDS(on) Max @ VGS=10V | 3.1 mΞ© | β |
| RDS(on) Max @ VGS=4.5V | [DATA_NEEDED: RDS(on) @ 4.5V] | β |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical/max] | β |
| Drive Voltage (Max RDS(on), Min RDS(on)) | 4.5 V, 10 V | β |
| Gate Charge (Qg) | [DATA_NEEDED: Qg typical @ 10V Vgs] | β |
| Output Charge (Qoss) | Ultra low (per datasheet tagline) | β |
| Operating Temperature | -55 Β°C to +175 Β°C (junction) | β |
| Package | PG-TO252-3-11 (DPAK-2) | PG-TO263-3-2 (D2PAK, surface mount, 3 pins + tab) |
| Mounting Type | Surface Mount | Surface Mount |
| Mounting Tab | Drain (electrically connected) | β |
| Avalanche Energy Rated | Yes (per OptiMOS 3 datasheet family) | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | [DATA_NEEDED: confirm MSL rating from manufacturer datasheet] |
| Manufacturer | β | Infineon Technologies |
| Part Family | β | OptiMOS 5 Linear FET 2 |
| Polarity / Channel Type | β | N-Channel |
| Drain-Source Voltage (V_DS) | β | 100 V |
| Continuous Drain Current (I_D) at T_C=25Β°C | β | 176 A |
| Continuous Drain Current (I_D) at T_A=25Β°C | β | 30 A |
| R_DS(on) Maximum | β | 2.1 mΞ© |
| Gate-Source Voltage (V_GS) Maximum | β | Β±20 V [DATA_NEEDED: absolute max rated V_GS] |
| Gate Threshold Voltage (V_GS(th)) | β | [DATA_NEEDED: V_GS(th) typical/min] |
| Power Dissipation (P_D) at T_C=25Β°C | β | 375 W |
| Power Dissipation (P_D) at T_A=25Β°C | β | 3.8 W |
| Operating Temperature Range | β | -55Β°C to +175Β°C [DATA_NEEDED: confirm from datasheet operating junction range] |
| Drive Voltage (Max R_DS(on), Min R_DS(on)) | β | 10 V, 15 V |