IPD031N03LGATMA1 vs IPB081N06L3GATMA1 Comparison
Detailed side-by-side comparison of IPD031N03LGATMA1 by Infineon and IPB081N06L3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD031N03LGATMA1 - 30V 90A OptiMOS 3 N-Channel MOSFET | Infineon
IPD031N03LGATMA1 β ActiveInfineon
IPB081N06L3GATMA1 - 60V 50A OptiMOS 3 N-Channel MOSFET | Infineon
IPB081N06L3GATMA1 β ActiveSpecification Comparison
| Parameter | IPD031N03LGATMA1 | IPB081N06L3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.41 | $0.95 |
| FET Type | N-Channel | β |
| Technology | MOSFET (Metal Oxide), OptiMOS 3 | OptiMOS 3 (low-voltage power MOSFET) |
| Drain-to-Source Voltage (Vdss) | 30 V | β |
| Continuous Drain Current (Id) @ 25 Β°C | 90 A (Tc) | β |
| Power Dissipation (Pd) | 94 W (Tc) | β |
| RDS(on) Max @ VGS=10V | 3.1 mΞ© | β |
| RDS(on) Max @ VGS=4.5V | [DATA_NEEDED: RDS(on) @ 4.5V] | β |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical/max] | β |
| Drive Voltage (Max RDS(on), Min RDS(on)) | 4.5 V, 10 V | β |
| Gate Charge (Qg) | [DATA_NEEDED: Qg typical @ 10V Vgs] | β |
| Output Charge (Qoss) | Ultra low (per datasheet tagline) | β |
| Operating Temperature | -55 Β°C to +175 Β°C (junction) | β |
| Package | PG-TO252-3-11 (DPAK-2) | PG-TO263-3 (D2PAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Mounting Tab | Drain (electrically connected) | β |
| Avalanche Energy Rated | Yes (per OptiMOS 3 datasheet family) | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | 1 (unlimited) |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS 3 |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID) at Tc=25C | β | 50 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current rating] |
| Gate-Source Voltage (VGS) | β | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | β | 1.2 V min, 2.1 V typ, 2.6 V max |
| On-Resistance RDS(on) at VGS=10V | β | 8.1 mOhm typical |
| Maximum Power Dissipation (Pd) at Tc=25C | β | 79 W |
| Operating Temperature Range | β | -55 C to +175 C (junction) |
| Number of Pins | β | 3 |
| Pin Configuration | β | Gate / Drain / Source (D2PAK standard) |