IPD031N03LGATMA1 vs IPB90N06S4L04ATMA2 Comparison
Detailed side-by-side comparison of IPD031N03LGATMA1 by Infineon and IPB90N06S4L04ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD031N03LGATMA1 - 30V 90A OptiMOS 3 N-Channel MOSFET | Infineon
IPD031N03LGATMA1 β Active
Specification Comparison
| Parameter | IPD031N03LGATMA1 | IPB90N06S4L04ATMA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.41 | $0.94 |
| FET Type | N-Channel | β |
| Technology | MOSFET (Metal Oxide), OptiMOS 3 | OptiMOS T2, N-channel enhancement mode |
| Drain-to-Source Voltage (Vdss) | 30 V | β |
| Continuous Drain Current (Id) @ 25 Β°C | 90 A (Tc) | β |
| Power Dissipation (Pd) | 94 W (Tc) | β |
| RDS(on) Max @ VGS=10V | 3.1 mΞ© | β |
| RDS(on) Max @ VGS=4.5V | [DATA_NEEDED: RDS(on) @ 4.5V] | β |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical/max] | β |
| Drive Voltage (Max RDS(on), Min RDS(on)) | 4.5 V, 10 V | β |
| Gate Charge (Qg) | [DATA_NEEDED: Qg typical @ 10V Vgs] | β |
| Output Charge (Qoss) | Ultra low (per datasheet tagline) | β |
| Operating Temperature | -55 Β°C to +175 Β°C (junction) | β |
| Package | PG-TO252-3-11 (DPAK-2) | PG-TO263-3-2 (D2PAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Mounting Tab | Drain (electrically connected) | β |
| Avalanche Energy Rated | Yes (per OptiMOS 3 datasheet family) | β |
| RoHS Status | Compliant | β |
| MSL Level | 1 | MSL1 (unlimited floor life) |
| Manufacturer | β | Infineon Technologies |
| Part Number | β | IPB90N06S4L04ATMA2 |
| Drain-Source Voltage (V_DSS) | β | 60 V |
| Continuous Drain Current (I_D, Tc) | β | 90 A |
| Pulsed Drain Current (I_D,pulse) | β | 360 A |
| Power Dissipation (P_D, Tc) | β | 150 W |
| On-State Resistance R_DS(on) (typ @ VGS=10V) | β | 3.4 mΞ© |
| Gate Threshold Voltage (V_GS(th)) | β | [DATA_NEEDED: V_GS(th)] |
| Gate-Source Voltage (V_GS) | β | Β±20 V |
| Operating Temperature Range | β | -55 Β°C to +175 Β°C |
| Peak Reflow Temperature | β | 260 Β°C |
| AEC-Q101 Qualification | β | Qualified (automotive grade) |
| Avalanche Tested | β | 100% avalanche-tested |
| RoHS / Halogen-Free | β | Yes (Green Product) |