IPD031N06L3GATMA1 vs BSC032N04LSATMA1 Comparison

Detailed side-by-side comparison of IPD031N06L3GATMA1 by Infineon and BSC032N04LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC032N04LSATMA1

BSC032N04LSATMA1 - 40V 3.2mΞ© OptiMOS 5 N-MOSFET | Infineon

BSC032N04LSATMA1 βœ“ Active

Specification Comparison

Parameter IPD031N06L3GATMA1 BSC032N04LSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.48 $0.32
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) OptiMOS 5 trench
Drain-to-Source Voltage (VDS) 60 V β€”
Continuous Drain Current (ID) at TC=25Β°C 100 A β€”
Pulsed Drain Current (IDM) 400 A β€”
Maximum Power Dissipation (PD) at TC=25Β°C 167 W β€”
RDS(on) Max at VGS=10V 3.1 mΞ© β€”
Gate Threshold Voltage (VGS(th)) 1.0 V to 2.2 V β€”
Gate Drive Voltage (Max RDS(on)) 4.5 V, 10 V β€”
Total Gate Charge (Qg) Typ [DATA_NEEDED: Qg typical value] β€”
Operating Temperature Range -55Β°C to +175Β°C β€”
Package PG-TO252-3 (DPAK) PG-TDSON-8-6 (SuperSO8 5x6 mm)
Mounting Type Surface Mount Surface Mount
Series OptiMOS 3 β€”
MSL Level 1 (Unlimited) β€”
RoHS Status Compliant Compliant
Manufacturer β€” Infineon Technologies
Part Series β€” OptiMOS 5 40V
Drain-Source Voltage (VDS) β€” 40 V
Continuous Drain Current (ID) at Ta=25Β°C β€” 21 A
Continuous Drain Current (ID) at Tc=25Β°C β€” 98 A
RDS(on) max at VGS=10V β€” 3.2 mΞ©
Power Dissipation (Ta) β€” 2.5 W
Power Dissipation (Tc) β€” 52 W
Gate-Source Voltage (VGS) β€” Β±20 V
Operating Junction Temperature β€” -55Β°C to +175Β°C
Lead-Free β€” Yes

Datasheets & Resources

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