IPD031N06L3GATMA1 vs IAUC120N06S5L032ATMA1 Comparison
Detailed side-by-side comparison of IPD031N06L3GATMA1 by Infineon and IAUC120N06S5L032ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD031N06L3GATMA1 - 60V 100A 3.1mΞ© N-Ch OptiMOS 3 MOSFET | Infineon
IPD031N06L3GATMA1 β ActiveInfineon
IAUC120N06S5L032ATMA1
IAUC120N06S5L032ATMA1 - 60V 120A OptiMOS 5 N-MOSFET | Infineon
IAUC120N06S5L032ATMA1 β ActiveSpecification Comparison
| Parameter | IPD031N06L3GATMA1 | IAUC120N06S5L032ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.48 | $0.82 |
| FET Type | N-Channel | β |
| Technology | MOSFET (Metal Oxide) | OptiMOS 5 Trench |
| Drain-to-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID) at TC=25Β°C | 100 A | β |
| Pulsed Drain Current (IDM) | 400 A | β |
| Maximum Power Dissipation (PD) at TC=25Β°C | 167 W | β |
| RDS(on) Max at VGS=10V | 3.1 mΞ© | β |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.2 V | β |
| Gate Drive Voltage (Max RDS(on)) | 4.5 V, 10 V | β |
| Total Gate Charge (Qg) Typ | [DATA_NEEDED: Qg typical value] | β |
| Operating Temperature Range | -55Β°C to +175Β°C | -55 C to +175 C (T_j) |
| Package | PG-TO252-3 (DPAK) | PG-TDSON-8-34 (5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Series | OptiMOS 3 | β |
| MSL Level | 1 (Unlimited) | [DATA_NEEDED: MSL rating] |
| RoHS Status | Compliant | Compliant |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 5 (60 V) |
| Transistor Type | β | N-Channel, Enhancement Mode |
| Drain-to-Source Voltage (V_DS) | β | 60 V |
| Continuous Drain Current (I_D, T_j) | β | 120 A |
| R_DS(on) Max (V_GS = 10 V) | β | 3.2 mOhm |
| Power Dissipation (P_D, T_C = 25 C) | β | 94 W |
| AEC-Q101 Qualified | β | Yes |
| Gate Threshold Voltage V_GS(th) | β | [DATA_NEEDED: V_GS(th) typical and min/max] |
| Total Gate Charge Q_G | β | [DATA_NEEDED: Q_G total at V_GS=10V] |