IPD031N06L3GATMA1 vs IPD034N06N3GATMA1 Comparison
Detailed side-by-side comparison of IPD031N06L3GATMA1 by Infineon and IPD034N06N3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD031N06L3GATMA1 - 60V 100A 3.1mΞ© N-Ch OptiMOS 3 MOSFET | Infineon
IPD031N06L3GATMA1 β Active
Specification Comparison
| Parameter | IPD031N06L3GATMA1 | IPD034N06N3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.48 | $0.51 |
| FET Type | N-Channel | β |
| Technology | MOSFET (Metal Oxide) | N-Channel Trench MOSFET (OptiMOS 3) |
| Drain-to-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID) at TC=25Β°C | 100 A | β |
| Pulsed Drain Current (IDM) | 400 A | β |
| Maximum Power Dissipation (PD) at TC=25Β°C | 167 W | β |
| RDS(on) Max at VGS=10V | 3.1 mΞ© | β |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.2 V | β |
| Gate Drive Voltage (Max RDS(on)) | 4.5 V, 10 V | β |
| Total Gate Charge (Qg) Typ | [DATA_NEEDED: Qg typical value] | β |
| Operating Temperature Range | -55Β°C to +175Β°C | [DATA_NEEDED: Tj min/max] |
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Series | OptiMOS 3 | OptiMOS 3 |
| MSL Level | 1 (Unlimited) | [DATA_NEEDED: MSL rating] |
| RoHS Status | Compliant | Compliant (Pb-free green finish) |
| Manufacturer | β | Infineon Technologies |
| Drain-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID) at Tc | β | 100 A |
| Maximum Power Dissipation (Ptot) | β | 167 W |
| On-Resistance RDS(on) max at VGS=10V | β | 3.4 mOhm |
| Gate Threshold Voltage VGS(th) | β | 4 V at 93 uA |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: max VGS rating] |
| Pin Configuration | β | 3-Pin (2 + Tab) |
| Automotive Qualified | β | Yes (per Infineon product page) |