IPD031N06L3GATMA1 vs IPD90N03S4L02ATMA1 Comparison

Detailed side-by-side comparison of IPD031N06L3GATMA1 by Infineon and IPD90N03S4L02ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPD031N06L3GATMA1 IPD90N03S4L02ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.48 $0.58
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide), OptiMOS-T2 trench
Drain-to-Source Voltage (VDS) 60 V 30 V
Continuous Drain Current (ID) at TC=25Β°C 100 A β€”
Pulsed Drain Current (IDM) 400 A β€”
Maximum Power Dissipation (PD) at TC=25Β°C 167 W β€”
RDS(on) Max at VGS=10V 3.1 mΞ© β€”
Gate Threshold Voltage (VGS(th)) 1.0 V to 2.2 V [DATA_NEEDED: typical value]
Gate Drive Voltage (Max RDS(on)) 4.5 V, 10 V β€”
Total Gate Charge (Qg) Typ [DATA_NEEDED: Qg typical value] β€”
Operating Temperature Range -55Β°C to +175Β°C β€”
Package PG-TO252-3 (DPAK) PG-TO252-3-11 (DPAK, surface mount)
Mounting Type Surface Mount Surface Mount
Series OptiMOS 3 OptiMOS-T2
MSL Level 1 (Unlimited) MSL1 (per JEDEC J-STD-020, up to 260Β°C peak reflow)
RoHS Status Compliant Compliant (Green Package)
Continuous Drain Current (ID) at Tc β€” 90 A
Power Dissipation (PD) at Tc β€” 136 W
RDS(on) Max at VGS=10 V β€” 2.2 mΞ©
RDS(on) Max at VGS=4.5 V β€” [DATA_NEEDED: typical value at VGS=4.5 V]
Gate Drive Voltage (VGS) β€” 4.5 V to 10 V
Operating Junction Temperature β€” -55Β°C to +175Β°C
Avalanche Rated β€” 100% Avalanche tested
Automotive Qualification β€” AEC-Q101 qualified

Datasheets & Resources

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