IPD031N06L3GATMA1 vs IPG20N10S436AATMA1 Comparison

Detailed side-by-side comparison of IPD031N06L3GATMA1 by Infineon and IPG20N10S436AATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPG20N10S436AATMA1 IPG20N10S436AATMA1 - Dual N-CH 100V 20A MOSFET Array | Infineon

IPG20N10S436AATMA1 - Dual N-CH 100V 20A MOSFET Array | Infineon

IPG20N10S436AATMA1 βœ“ Active

Specification Comparison

Parameter IPD031N06L3GATMA1 IPG20N10S436AATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.48 $0.68
FET Type N-Channel β€”
Technology MOSFET (Metal Oxide) β€”
Drain-to-Source Voltage (VDS) 60 V β€”
Continuous Drain Current (ID) at TC=25Β°C 100 A β€”
Pulsed Drain Current (IDM) 400 A β€”
Maximum Power Dissipation (PD) at TC=25Β°C 167 W β€”
RDS(on) Max at VGS=10V 3.1 mΞ© β€”
Gate Threshold Voltage (VGS(th)) 1.0 V to 2.2 V β€”
Gate Drive Voltage (Max RDS(on)) 4.5 V, 10 V β€”
Total Gate Charge (Qg) Typ [DATA_NEEDED: Qg typical value] β€”
Operating Temperature Range -55Β°C to +175Β°C β€”
Package PG-TO252-3 (DPAK) PG-TDSON-8-10 (Wettable Flank)
Mounting Type Surface Mount Surface Mount
Series OptiMOS 3 β€”
MSL Level 1 (Unlimited) MSL1 (260 C peak reflow)
RoHS Status Compliant Compliant (Green Product)
Configuration β€” Dual N-Channel (2 Elements with Built-in Diode)
Drain-Source Voltage (VDS) β€” 100 V
Continuous Drain Current (ID) β€” 20 A (per channel)
Total Power Dissipation (PD) β€” 43 W
Operating Mode β€” Enhancement Mode
Operating Temperature (TJ max) β€” +175 C
JESD-609 Code β€” e3
Automotive Qualification β€” AEC-Q101
Avalanche Tested β€” 100%
AOI Compatible β€” Yes (Wettable Flank)
Channel Type β€” N-Channel Normal Level

Datasheets & Resources

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