IPD034N06N3GATMA1 vs BSC076N06NS3GATMA1 Comparison

Detailed side-by-side comparison of IPD034N06N3GATMA1 by Infineon and BSC076N06NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPD034N06N3GATMA1 IPD034N06N3GATMA1 - 60V 100A OptiMOS 3 N-MOSFET | Infineon

IPD034N06N3GATMA1 - 60V 100A OptiMOS 3 N-MOSFET | Infineon

IPD034N06N3GATMA1 βœ“ Active

Specification Comparison

Parameter IPD034N06N3GATMA1 BSC076N06NS3GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.51 $0.65
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 3 β€”
Technology N-Channel Trench MOSFET (OptiMOS 3) N-Channel Trench MOSFET
Drain-Source Voltage (VDS) 60 V 60 V
Continuous Drain Current (ID) at Tc 100 A β€”
Maximum Power Dissipation (Ptot) 167 W β€”
On-Resistance RDS(on) max at VGS=10V 3.4 mOhm 7.6 mΞ©
Gate Threshold Voltage VGS(th) 4 V at 93 uA β€”
Gate-Source Voltage (VGS) max [DATA_NEEDED: max VGS rating] Β±20 V
Package PG-TO252-3 (DPAK) PG-TDSON-8-5 (SuperSO8 5x6 mm)
Mounting Type Surface Mount Surface Mount
Pin Configuration 3-Pin (2 + Tab) β€”
Operating Temperature Range [DATA_NEEDED: Tj min/max] -55C to +150C
RoHS Status Compliant (Pb-free green finish) β€”
Automotive Qualified Yes (per Infineon product page) β€”
MSL Level [DATA_NEEDED: MSL rating] 1 (unlimited)
Product Family β€” OptiMOS 3
Continuous Drain Current (ID) at TC=25C β€” 50 A
On-Resistance RDS(on) max at VGS=4.5V β€” 10.4 mΞ©
Gate Threshold Voltage (VGS(th)) β€” 2.0 V to 3.5 V
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg value]
Power Dissipation (Ta) β€” 2.5 W
Power Dissipation (Tc) β€” 69 W
RoHS Compliance β€” Compliant
Halogen-Free β€” Yes (per Infineon product page)

Datasheets & Resources

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