IPD034N06N3GATMA1 vs IPD031N06L3GATMA1 Comparison
Detailed side-by-side comparison of IPD034N06N3GATMA1 by Infineon and IPD031N06L3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD031N06L3GATMA1 - 60V 100A 3.1mΞ© N-Ch OptiMOS 3 MOSFET | Infineon
IPD031N06L3GATMA1 β ActiveSpecification Comparison
| Parameter | IPD034N06N3GATMA1 | IPD031N06L3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.51 | $0.48 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS 3 | OptiMOS 3 |
| Technology | N-Channel Trench MOSFET (OptiMOS 3) | MOSFET (Metal Oxide) |
| Drain-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID) at Tc | 100 A | β |
| Maximum Power Dissipation (Ptot) | 167 W | β |
| On-Resistance RDS(on) max at VGS=10V | 3.4 mOhm | β |
| Gate Threshold Voltage VGS(th) | 4 V at 93 uA | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: max VGS rating] | β |
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Configuration | 3-Pin (2 + Tab) | β |
| Operating Temperature Range | [DATA_NEEDED: Tj min/max] | -55Β°C to +175Β°C |
| RoHS Status | Compliant (Pb-free green finish) | Compliant |
| Automotive Qualified | Yes (per Infineon product page) | β |
| MSL Level | [DATA_NEEDED: MSL rating] | 1 (Unlimited) |
| FET Type | β | N-Channel |
| Drain-to-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID) at TC=25Β°C | β | 100 A |
| Pulsed Drain Current (IDM) | β | 400 A |
| Maximum Power Dissipation (PD) at TC=25Β°C | β | 167 W |
| RDS(on) Max at VGS=10V | β | 3.1 mΞ© |
| Gate Threshold Voltage (VGS(th)) | β | 1.0 V to 2.2 V |
| Gate Drive Voltage (Max RDS(on)) | β | 4.5 V, 10 V |
| Total Gate Charge (Qg) Typ | β | [DATA_NEEDED: Qg typical value] |