IPD038N06NF2SATMA1 vs BSC054N04NSGATMA1 Comparison
Detailed side-by-side comparison of IPD038N06NF2SATMA1 by Infineon and BSC054N04NSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPD038N06NF2SATMA1 | BSC054N04NSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.95 | $0.42 |
| FET Type | N-Channel | β |
| Technology | OptiMOS (Trench) | OptiMOS 3 (N-Channel Trench MOSFET) |
| Drain-Source Voltage (VDS) | 60 V | 40 V |
| Continuous Drain Current (ID) at TC=25Β°C | 120 A | β |
| Continuous Drain Current (ID) at TA=25Β°C | 20 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | β |
| Gate-Source Voltage (VGS) max | Β±20 V | Β±20 V |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | 3.85 mΞ© max | β |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | β |
| Typical Gate Charge (Qg) at VGS=10V | 68 nC | β |
| Input Capacitance (Ciss) | 6700 pF | β |
| Output Capacitance (Coss) | 670 pF | β |
| Reverse Transfer Capacitance (Crss) | 43 pF | β |
| Power Dissipation (PD) at TA=25Β°C | 3 W | β |
| Power Dissipation (PD) at TC=25Β°C | 107 W | β |
| Operating Junction Temperature | -55Β°C to +175Β°C | β |
| Package | PG-TO252-3 (DPAK) | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| Channel Mode | Enhancement | β |
| Manufacturer | β | Infineon Technologies |
| Part Number | β | BSC054N04NSGATMA1 |
| Continuous Drain Current (ID) at Tc=25C | β | 81 A |
| Continuous Drain Current (ID) at Ta=25C | β | 17 A |
| On-Resistance RDS(on) max at VGS=10V | β | 5.4 mOhm |
| Power Dissipation at Tc=25C | β | 57 W |
| Power Dissipation at Ta=25C | β | 2.5 W |
| Operating Temperature Range | β | -55C to +150C |
| MSL Level | β | 1 (per JEDEC J-STD-020) |
| Gate Drive Voltage (recommended) | β | 10 V |
| Lead-Free Reflow | β | Yes |