IPD038N06NF2SATMA1 vs BSZ024N04LS6ATMA1 Comparison
Detailed side-by-side comparison of IPD038N06NF2SATMA1 by Infineon and BSZ024N04LS6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPD038N06NF2SATMA1 | BSZ024N04LS6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.95 | $0.46 |
| FET Type | N-Channel | β |
| Technology | OptiMOS (Trench) | OptiMOS 6 (shielded-gate trench) |
| Drain-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID) at TC=25Β°C | 120 A | β |
| Continuous Drain Current (ID) at TA=25Β°C | 20 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | β |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | 3.85 mΞ© max | β |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | β |
| Typical Gate Charge (Qg) at VGS=10V | 68 nC | β |
| Input Capacitance (Ciss) | 6700 pF | β |
| Output Capacitance (Coss) | 670 pF | β |
| Reverse Transfer Capacitance (Crss) | 43 pF | β |
| Power Dissipation (PD) at TA=25Β°C | 3 W | β |
| Power Dissipation (PD) at TC=25Β°C | 107 W | β |
| Operating Junction Temperature | -55Β°C to +175Β°C | -55Β°C to +175Β°C |
| Package | PG-TO252-3 (DPAK) | PG-TSDSON-8-FL (3.3 mm x 3.3 mm) |
| Mounting Type | Surface Mount | Surface Mount, top-side drain pad |
| RoHS Status | Compliant | Compliant |
| Channel Mode | Enhancement | β |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | β | 40 V |
| Continuous Drain Current (I_D, Ta) | β | 24 A |
| Continuous Drain Current (I_D, Tc) | β | 40 A |
| Pulsed Drain Current (I_DM) | β | 130 A |
| R_DS(on) Max @ V_GS=10V | β | 2.4 mΞ© |
| R_DS(on) Max @ V_GS=4.5V | β | [DATA_NEEDED: R_DS(on) at 4.5V] |
| Gate Threshold Voltage (V_GS(th)) | β | 2.3 V (typical) |
| Total Gate Charge (Q_g) @ V_GS=10V | β | 25 nC |
| Input Capacitance (C_iss) | β | 1.8 nF |
| Output Capacitance (C_oss) | β | 19 pF |
| Power Dissipation (P_D, Ta) | β | 2.5 W |
| Power Dissipation (P_D, Tc) | β | 75 W |
| MSL Level | β | 1 (per JEDEC J-STD-020) |