IPD038N06NF2SATMA1 vs IPC90N04S5L3R3ATMA1 Comparison
Detailed side-by-side comparison of IPD038N06NF2SATMA1 by Infineon and IPC90N04S5L3R3ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPC90N04S5L3R3ATMA1
IPC90N04S5L3R3ATMA1 - 40V 90A OptiMOS N-Channel MOSFET | Infineon
IPC90N04S5L3R3ATMA1 β ActiveSpecification Comparison
| Parameter | IPD038N06NF2SATMA1 | IPC90N04S5L3R3ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.95 | $0.96 |
| FET Type | N-Channel | N-Channel, Enhancement Mode |
| Technology | OptiMOS (Trench) | β |
| Drain-Source Voltage (VDS) | 60 V | 40 V |
| Continuous Drain Current (ID) at TC=25Β°C | 120 A | 90 A |
| Continuous Drain Current (ID) at TA=25Β°C | 20 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | β |
| Gate-Source Voltage (VGS) max | Β±20 V | Β±20 V |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | 3.85 mΞ© max | β |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | β |
| Typical Gate Charge (Qg) at VGS=10V | 68 nC | β |
| Input Capacitance (Ciss) | 6700 pF | β |
| Output Capacitance (Coss) | 670 pF | β |
| Reverse Transfer Capacitance (Crss) | 43 pF | β |
| Power Dissipation (PD) at TA=25Β°C | 3 W | β |
| Power Dissipation (PD) at TC=25Β°C | 107 W | β |
| Operating Junction Temperature | -55Β°C to +175Β°C | -55Β°C to +175Β°C |
| Package | PG-TO252-3 (DPAK) | PG-TDSON-8-34 (TDSON-8) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | β |
| Channel Mode | Enhancement | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 5 40V |
| On-Resistance RDS(on) max at VGS=10V | β | 3.3 mΞ© |
| On-Resistance RDS(on) at VGS=4.5V | β | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage VGS(th) | β | 1.7 V to 2.7 V (logic level) |
| Total Power Dissipation (TC=25Β°C) | β | 62 W |
| Storage Temperature Range | β | [DATA_NEEDED: storage temp range] |
| MSL Moisture Sensitivity | β | MSL1 (per JEDEC J-STD-020) |
| Peak Reflow Temperature | β | 260Β°C |
| Qualification | β | AEC-Q101 automotive qualified |
| Avalanche Tested | β | 100% (production-level) |
| RoHS Compliance | β | Compliant (Green Product) |