IPD042P03L3GATMA1 vs IPD060N03LGATMA1 Comparison

Detailed side-by-side comparison of IPD042P03L3GATMA1 by Infineon and IPD060N03LGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPD042P03L3GATMA1 IPD042P03L3GATMA1 - 30V P-Ch 4.2mΞ© 70A MOSFET | Infineon

IPD042P03L3GATMA1 - 30V P-Ch 4.2mΞ© 70A MOSFET | Infineon

IPD042P03L3GATMA1 βœ“ Active
Infineon
IPD060N03LGATMA1 IPD060N03LGATMA1 - 30V 50A OptiMOS N-Ch MOSFET | Infineon

IPD060N03LGATMA1 - 30V 50A OptiMOS N-Ch MOSFET | Infineon

IPD060N03LGATMA1 βœ“ Active

Specification Comparison

Parameter IPD042P03L3GATMA1 IPD060N03LGATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.28 $0.20
Polarity P-Channel β€”
Drain-Source Voltage (VDS) -30 V 30 V
Continuous Drain Current (ID, Tc=25Β°C) -70 A β€”
Pulsed Drain Current (IDM) -280 A β€”
RDS(on) max @ VGS = -10 V 4.2 mΞ© β€”
RDS(on) max @ VGS = -4.5 V [DATA_NEEDED: RDS(on) @ -4.5 V] β€”
Gate Threshold Voltage (VGS(th)) -1.5 V (typ) β€”
Gate Charge (Qg) [DATA_NEEDED: total gate charge] β€”
Total Power Dissipation (PD @ Tc=25Β°C) 150 W β€”
Single-Pulse Avalanche Energy (EAS) 290 mJ β€”
Operating Temperature Range -55Β°C to +175Β°C (TJ) β€”
Package PG-TO252-3 (DPAK) β€”
Technology OptiMOSβ„’ P (Trench) β€”
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant
MSL Level 1 1 (Unlimited)
Manufacturer β€” Infineon Technologies
Product Family β€” OptiMOS 30V
Polarity / Channel Type β€” N-Channel
Continuous Drain Current (ID, TC=25C) β€” 50 A
Pulsed Drain Current (IDM, TC=25C, tp<=10us) β€” 200 A
Gate-Source Voltage (VGS) β€” +/-20 V
Gate Threshold Voltage (VGS(th), typ) β€” 1.7 V
On-State Resistance (RDS(on), VGS=10V) β€” 6.0 mOhm (typ) / 7.5 mOhm (max)
On-State Resistance (RDS(on), VGS=4.5V) β€” [DATA_NEEDED: RDS(on) at VGS=4.5V]
Total Gate Charge (Qg, typ) β€” 21 nC
Output Charge (Qoss, typ) β€” [DATA_NEEDED: Qoss]
Reverse Recovery Charge (Qrr) β€” [DATA_NEEDED: Qrr]
Power Dissipation (PD, TC=25C) β€” 56 W
Operating Junction Temperature β€” -55C to +175C
Thermal Resistance Junction-to-Case (RthJC, max) β€” 2.5 C/W
Thermal Resistance Junction-to-Ambient (RthJA, max, std PCB) β€” 62 C/W
Package / Case β€” PG-TO252-3 (DPAK)
Lead-Free / Halogen-Free β€” Yes / Yes
Packing β€” Tape & Reel (T/R), 2500 per reel
AEC-Q101 / Automotive Grade β€” Not qualified
Technology / Generation β€” OptiMOS 30V, trench MOSFET

Datasheets & Resources

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