IPD042P03L3GATMA1 vs IRFR1018ETRPBF Comparison

Detailed side-by-side comparison of IPD042P03L3GATMA1 by Infineon and IRFR1018ETRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPD042P03L3GATMA1 IPD042P03L3GATMA1 - 30V P-Ch 4.2mΞ© 70A MOSFET | Infineon

IPD042P03L3GATMA1 - 30V P-Ch 4.2mΞ© 70A MOSFET | Infineon

IPD042P03L3GATMA1 βœ“ Active

Specification Comparison

Parameter IPD042P03L3GATMA1 IRFR1018ETRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.28 $0.36
Polarity P-Channel β€”
Drain-Source Voltage (VDS) -30 V β€”
Continuous Drain Current (ID, Tc=25Β°C) -70 A β€”
Pulsed Drain Current (IDM) -280 A β€”
RDS(on) max @ VGS = -10 V 4.2 mΞ© β€”
RDS(on) max @ VGS = -4.5 V [DATA_NEEDED: RDS(on) @ -4.5 V] β€”
Gate Threshold Voltage (VGS(th)) -1.5 V (typ) β€”
Gate Charge (Qg) [DATA_NEEDED: total gate charge] β€”
Total Power Dissipation (PD @ Tc=25Β°C) 150 W β€”
Single-Pulse Avalanche Energy (EAS) 290 mJ β€”
Operating Temperature Range -55Β°C to +175Β°C (TJ) -55 Β°C to +175 Β°C
Package PG-TO252-3 (DPAK) TO-252AA (D-Pak)
Technology OptiMOSβ„’ P (Trench) HEXFET
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant
MSL Level 1 1
FET Type β€” N-Channel
Drain-to-Source Voltage (Vdss) β€” 60 V
Continuous Drain Current (Id) β€” 79 A (Tc)
Pulsed Drain Current (Idm) β€” [DATA_NEEDED: pulsed drain current]
Rds(on) Max @ Vgs=10V β€” 8.4 mΞ©
Rds(on) Max @ Vgs=4.5V β€” [DATA_NEEDED: Rds(on) at 4.5V]
Gate Threshold Voltage (Vgs(th)) β€” 2.0 V to 4.0 V
Total Gate Charge (Qg) β€” 46 nC
Input Capacitance (Ciss) β€” [DATA_NEEDED: Ciss]
Output Capacitance (Coss) β€” [DATA_NEEDED: Coss]
Reverse Transfer Capacitance (Crss) β€” [DATA_NEEDED: Crss]
Maximum Power Dissipation (Pd) β€” 110 W (Tc)
Lead-Free β€” Yes
Avalanche Rated β€” Yes

Datasheets & Resources

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