IPD046N08N5ATMA1 vs IPB031N08N5ATMA1 Comparison

Detailed side-by-side comparison of IPD046N08N5ATMA1 by Infineon and IPB031N08N5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPD046N08N5ATMA1 IPB031N08N5ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.78 $2.62
Manufacturer Infineon Technologies
Product Series OptiMOS™ 5 80V
Transistor Type N-Channel MOSFET
Drain-Source Voltage (VDS) Max 80 V 80 V
Continuous Drain Current (ID) at Tc=25°C 90 A
On-Resistance RDS(on) Max at VGS=10V 4.6 mΩ
Gate-Source Voltage (VGS) Max ±20 V [DATA_NEEDED: VGS max rating]
Power Dissipation (PD) at Tc=25°C 125 W
Operating Junction Temperature Range -55 °C to +175 °C
Package / Case PG-TO252-3 (DPAK), 3-pin (2 leads + tab)
Mounting Type Surface Mount Surface Mount
Technology OptiMOS™ 5 trench MOSFET OptiMOS 5 (N-channel trench MOSFET)
RoHS Status ROHS3 Compliant Compliant
MSL Level 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
Configuration Single N-channel, 3-pin (Gate / Drain tab / Source)
Continuous Drain Current (ID) 120 A (Tc)
Power Dissipation (PD) Max 167 W (Tc)
On-Resistance (RDS(on)) Max 3.1 mOhm (VGS=10V)
Gate Threshold Voltage (VGS(th)) Typ [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) [DATA_NEEDED: Qg total]
Operating Temperature Range -55 C to +175 C
Package PG-TO263-3 (D2PAK)
Pin Count 3 (Gate, Drain, Source + Tab)
Tab Connection Drain (electrically connected to pin)
Automotive Qualified Yes (per Arrow listing)

Datasheets & Resources

Browse All Products Create BOM Request Quote