IPD046N08N5ATMA1 vs ISC016N08NM8ATMA1 Comparison
Detailed side-by-side comparison of IPD046N08N5ATMA1 by Infineon and ISC016N08NM8ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPD046N08N5ATMA1 | ISC016N08NM8ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.78 | $1.02 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOSβ’ 5 80V | OptiMOS 8 |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) Max | 80 V | β |
| Continuous Drain Current (ID) at Tc=25Β°C | 90 A | β |
| On-Resistance RDS(on) Max at VGS=10V | 4.6 mΞ© | β |
| Gate-Source Voltage (VGS) Max | Β±20 V | β |
| Power Dissipation (PD) at Tc=25Β°C | 125 W | β |
| Operating Junction Temperature Range | -55 Β°C to +175 Β°C | β |
| Package / Case | PG-TO252-3 (DPAK), 3-pin (2 leads + tab) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOSβ’ 5 trench MOSFET | Trench-gate OptiMOS 8 (silicon) |
| RoHS Status | ROHS3 Compliant | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020E classification for SuperSO8) |
| Configuration | Single N-channel, 3-pin (Gate / Drain tab / Source) | β |
| Channel Type | β | N-Channel |
| Drain-Source Voltage (VDS max) | β | 80 V |
| Gate-Source Voltage (VGS max) | β | +/-20 V (typical rating) |
| Continuous Drain Current (ID) at Ta | β | 29 A |
| Continuous Drain Current (ID) at Tc | β | [DATA_NEEDED: pulsed/continuous current rating at Tc] |
| Pulsed Drain Current (IDM) at Tc | β | 268 A |
| Power Dissipation (PD) at Ta | β | 3 W |
| Power Dissipation (PD) at Tc | β | 263 W |
| On-State Resistance RDS(on) typ @ VGS=10V | β | 1.6 mOhm |
| Gate Threshold Voltage VGS(th) typ | β | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge Qg typ | β | [DATA_NEEDED: total gate charge] |
| Operating Temperature Range | β | -55 C to +150 C (junction) |
| Package | β | SuperSO8 / PG-TDSON-8 (5.0 x 6.0 mm) |
| Lead-Free / Halogen-Free | β | Lead-free (per Infineon product page) |