IPD060N03LGATMA1 vs BSC0902NSIATMA1 Comparison
Detailed side-by-side comparison of IPD060N03LGATMA1 by Infineon and BSC0902NSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC0902NSIATMA1
BSC0902NSIATMA1 - 30V N-Ch OptiMOS MOSFET, PG-TDSON-8 | Infineon
BSC0902NSIATMA1 β ActiveSpecification Comparison
| Parameter | IPD060N03LGATMA1 | BSC0902NSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.20 | $0.32 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 30V | OptiMOS 30V |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 30 V | β |
| Continuous Drain Current (ID, TC=25C) | 50 A | β |
| Pulsed Drain Current (IDM, TC=25C, tp<=10us) | 200 A | β |
| Gate-Source Voltage (VGS) | +/-20 V | β |
| Gate Threshold Voltage (VGS(th), typ) | 1.7 V | β |
| On-State Resistance (RDS(on), VGS=10V) | 6.0 mOhm (typ) / 7.5 mOhm (max) | β |
| On-State Resistance (RDS(on), VGS=4.5V) | [DATA_NEEDED: RDS(on) at VGS=4.5V] | β |
| Total Gate Charge (Qg, typ) | 21 nC | β |
| Output Charge (Qoss, typ) | [DATA_NEEDED: Qoss] | β |
| Reverse Recovery Charge (Qrr) | [DATA_NEEDED: Qrr] | β |
| Power Dissipation (PD, TC=25C) | 56 W | β |
| Operating Junction Temperature | -55C to +175C | β |
| Thermal Resistance Junction-to-Case (RthJC, max) | 2.5 C/W | β |
| Thermal Resistance Junction-to-Ambient (RthJA, max, std PCB) | 62 C/W | β |
| Package / Case | PG-TO252-3 (DPAK) | β |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (Unlimited) | [DATA_NEEDED: MSL rating] |
| RoHS Status | Compliant | Compliant |
| Lead-Free / Halogen-Free | Yes / Yes | β |
| Packing | Tape & Reel (T/R), 2500 per reel | β |
| AEC-Q101 / Automotive Grade | Not qualified | β |
| Technology / Generation | OptiMOS 30V, trench MOSFET | β |
| Channel Type | β | N-Channel |
| Drain-Source Voltage (VDS) Max | β | 30 V |
| Gate-Source Voltage (VGS) Max | β | [DATA_NEEDED: VGS max rating] |
| Continuous Drain Current (ID) at TA=25C | β | 23 A |
| Continuous Drain Current (ID) at TC=25C | β | 100 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM] |
| On-State Resistance RDS(on) Max at VGS=10V | β | 2.8 mOhm |
| Gate Charge QG(0V..10V) | β | 24 nC |
| Output Charge QOSS | β | 17 nC |
| Power Dissipation (TA) | β | 2.5 W |
| Power Dissipation (TC) | β | 48 W |
| Operating Temperature Range | β | -55C to +150C (junction) |
| Package | β | PG-TDSON-8-6 (TDSON-8) |
| Built-in Diode | β | Yes (single with built-in diode) |
| Lead-Free | β | Yes |
| Halogen-Free | β | Yes |