IPD068N10N3GATMA1 vs BSF134N10NJ3GXUMA1 Comparison
Detailed side-by-side comparison of IPD068N10N3GATMA1 by Infineon and BSF134N10NJ3GXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD068N10N3GATMA1 - 100V 90A OptiMOS 3 N-Channel MOSFET | Infineon
IPD068N10N3GATMA1 β ActiveInfineon
BSF134N10NJ3GXUMA1
BSF134N10NJ3GXUMA1 - 100V OptiMOS N-Ch MOSFET, 9A/40A | Infineon
BSF134N10NJ3GXUMA1 β ActiveSpecification Comparison
| Parameter | IPD068N10N3GATMA1 | BSF134N10NJ3GXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.65 | $0.78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPD068N10N3GATMA1 | β |
| Technology | OptiMOS 3 (N-Channel, Enhancement Mode) | Trench-gate OptiMOS planar |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at Tc | 90 A | β |
| On-Resistance RDS(on) max | 6.8 mOhm | β |
| Power Dissipation (PD) at Tc | 150 W | β |
| Gate Threshold Voltage VGS(th) | 2.0 V to 4.0 V (typical) | β |
| Package | PG-TO252-3 (DPAK, 2 leads + tab) | MG-WDSON-2 (CanPAK M) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Junction Temperature | -55 C to +175 C | β |
| Channel Type | N-Channel | β |
| Configuration | Single | Single with built-in diode |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | [DATA_NEEDED: MSL rating] |
| Packing | Tape & Reel (T/R) | β |
| Qualification | Industrial (non-automotive) | β |
| Series | β | OptiMOS 100 V |
| FET Type | β | N-Channel |
| Continuous Drain Current (ID) at TA=25Β°C | β | 9 A |
| Continuous Drain Current (ID) at TC=25Β°C | β | 40 A |
| Power Dissipation (PD) at TA=25Β°C | β | 2.2 W |
| Power Dissipation (PD) at TC=25Β°C | β | 43 W |
| Terminal Position | β | Bottom |
| Terminal Finish | β | Silver Nickel |
| Operating Temperature Range | β | -55Β°C to +150Β°C (TJ max) [DATA_NEEDED: exact Min/Max from datasheet] |
| Gate Charge (Qg) | β | [DATA_NEEDED: Qg value] |
| RDS(on) at VGS=10V | β | [DATA_NEEDED: RDS(on) max value] |
| Body Diode Reverse Recovery | β | [DATA_NEEDED: trr value] |