IPD068N10N3GATMA1 vs IPD90N06S404ATMA2 Comparison

Detailed side-by-side comparison of IPD068N10N3GATMA1 by Infineon and IPD90N06S404ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPD90N06S404ATMA2 IPD90N06S404ATMA2 - 60V 90A N-Ch OptiMOS MOSFET | Infineon

IPD90N06S404ATMA2 - 60V 90A N-Ch OptiMOS MOSFET | Infineon

IPD90N06S404ATMA2 βœ“ Active

Specification Comparison

Parameter IPD068N10N3GATMA1 IPD90N06S404ATMA2
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.65 $0.72
Manufacturer Infineon Technologies β€”
Part Number IPD068N10N3GATMA1 β€”
Technology OptiMOS 3 (N-Channel, Enhancement Mode) OptiMOS
Drain-Source Voltage (VDS) 100 V 60 V
Continuous Drain Current (ID) at Tc 90 A β€”
On-Resistance RDS(on) max 6.8 mOhm β€”
Power Dissipation (PD) at Tc 150 W β€”
Gate Threshold Voltage VGS(th) 2.0 V to 4.0 V (typical) β€”
Package PG-TO252-3 (DPAK, 2 leads + tab) PG-TO252-3-11 (DPAK), 3-pin surface mount
Mounting Type Surface Mount Surface Mount
Operating Junction Temperature -55 C to +175 C β€”
Channel Type N-Channel β€”
Configuration Single β€”
RoHS Status Compliant Compliant (Green Product)
MSL Level 1 MSL1
Packing Tape & Reel (T/R) β€”
Qualification Industrial (non-automotive) β€”
FET Type β€” N-Channel, Enhancement Mode
Continuous Drain Current (ID, Tc) β€” 90 A
Power Dissipation (PD, Tc) β€” 150 W
On-Resistance (RDS(on)) β€” 3.8 mΞ© (typ) at VGS = 10 V
Operating Temperature (TJ max) β€” 175 Β°C
Peak Reflow Temperature β€” 260 Β°C (MSL1)
Avalanche Rating β€” 100% Avalanche Tested
Automotive Qualification β€” AEC-Q101
Polarity β€” Single N-Channel

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