IPD068P03L3GATMA1 vs IPD042P03L3GATMA1 Comparison
Detailed side-by-side comparison of IPD068P03L3GATMA1 by Infineon and IPD042P03L3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPD068P03L3GATMA1 | IPD042P03L3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.51 | $0.28 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS P-Channel Power MOSFET | β |
| Polarity / Channel Type | P-Channel | β |
| Drain-Source Voltage (V_DS) | -30 V | β |
| Continuous Drain Current (I_D) at T_C | -70 A | β |
| Pulsed Drain Current (I_D,pulse) | [DATA_NEEDED: pulsed drain current] | β |
| Power Dissipation (P_D) at T_C | 100 W | β |
| R_DS(on) max at V_GS=-10V | 0.005 ohm (typical) | β |
| Gate-Source Threshold Voltage (V_GS(th)) | -1.0 V to -2.2 V | β |
| Gate Charge (Q_g) | [DATA_NEEDED: total gate charge] | β |
| Operating Temperature Range | -55C to +175C (junction) | -55Β°C to +175Β°C (TJ) |
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Channel Mode | Enhancement | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (unlimited floor life at <30C/85% RH) | 1 |
| Technology | Trench MOSFET (OptiMOS) | OptiMOSβ’ P (Trench) |
| Polarity | β | P-Channel |
| Drain-Source Voltage (VDS) | β | -30 V |
| Continuous Drain Current (ID, Tc=25Β°C) | β | -70 A |
| Pulsed Drain Current (IDM) | β | -280 A |
| RDS(on) max @ VGS = -10 V | β | 4.2 mΞ© |
| RDS(on) max @ VGS = -4.5 V | β | [DATA_NEEDED: RDS(on) @ -4.5 V] |
| Gate Threshold Voltage (VGS(th)) | β | -1.5 V (typ) |
| Gate Charge (Qg) | β | [DATA_NEEDED: total gate charge] |
| Total Power Dissipation (PD @ Tc=25Β°C) | β | 150 W |
| Single-Pulse Avalanche Energy (EAS) | β | 290 mJ |