IPD082N10N3GATMA1 vs BSC076N06NS3GATMA1 Comparison

Detailed side-by-side comparison of IPD082N10N3GATMA1 by Infineon and BSC076N06NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPD082N10N3GATMA1 BSC076N06NS3GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.14 $0.65
Part Number IPD082N10N3GATMA1 β€”
Manufacturer Infineon Technologies Infineon Technologies
Technology OptiMOS 3 (Trench N-Channel) N-Channel Trench MOSFET
Drain-Source Voltage (VDS) 100 V 60 V
Continuous Drain Current (ID) @ Tc=25Β°C 80 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] β€”
On-Resistance RDS(on) max @ VGS=10 V 8.2 mΞ© β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/max] 2.0 V to 3.5 V
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] [DATA_NEEDED: Qg value]
Power Dissipation (PD) @ Tc=25Β°C 125 W β€”
Operating Junction Temperature -55Β°C to +175Β°C β€”
Package / Case PG-TO252-3 (DPAK), surface mount β€”
Mounting Type Surface Mount Surface Mount
Pin Count 3 (Gate, Drain, Source) β€”
RoHS Status Compliant β€”
Automotive Qualified (AEC-Q101) Not applicable (industrial/consumer grade) β€”
Lead-Free Yes β€”
MSL Level 1 (per JEDEC J-STD-020) 1 (unlimited)
Product Family β€” OptiMOS 3
Continuous Drain Current (ID) at TC=25C β€” 50 A
On-Resistance RDS(on) max at VGS=10V β€” 7.6 mΞ©
On-Resistance RDS(on) max at VGS=4.5V β€” 10.4 mΞ©
Gate-Source Voltage (VGS) max β€” Β±20 V
Power Dissipation (Ta) β€” 2.5 W
Power Dissipation (Tc) β€” 69 W
Operating Temperature Range β€” -55C to +150C
Package β€” PG-TDSON-8-5 (SuperSO8 5x6 mm)
RoHS Compliance β€” Compliant
Halogen-Free β€” Yes (per Infineon product page)

Datasheets & Resources

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