IPD082N10N3GATMA1 vs BSZ011NE2LS5IATMA1 Comparison
Detailed side-by-side comparison of IPD082N10N3GATMA1 by Infineon and BSZ011NE2LS5IATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD082N10N3GATMA1 - 100V N-Channel OptiMOS 3 Power MOSFET | Infineon
IPD082N10N3GATMA1 β ActiveInfineon
BSZ011NE2LS5IATMA1
BSZ011NE2LS5IATMA1 - 25V 1.1mΞ© OptiMOS 5 N-MOSFET | Infineon
BSZ011NE2LS5IATMA1 β ActiveSpecification Comparison
| Parameter | IPD082N10N3GATMA1 | BSZ011NE2LS5IATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.14 | $0.55 |
| Part Number | IPD082N10N3GATMA1 | β |
| Manufacturer | Infineon Technologies | β |
| Technology | OptiMOS 3 (Trench N-Channel) | OptiMOS 5 (Trench) |
| Drain-Source Voltage (VDS) | 100 V | 25 V |
| Continuous Drain Current (ID) @ Tc=25Β°C | 80 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| On-Resistance RDS(on) max @ VGS=10 V | 8.2 mΞ© | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/max] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | β |
| Power Dissipation (PD) @ Tc=25Β°C | 125 W | β |
| Operating Junction Temperature | -55Β°C to +175Β°C | β |
| Package / Case | PG-TO252-3 (DPAK), surface mount | β |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 3 (Gate, Drain, Source) | β |
| RoHS Status | Compliant | Compliant |
| Automotive Qualified (AEC-Q101) | Not applicable (industrial/consumer grade) | β |
| Lead-Free | Yes | Yes |
| MSL Level | 1 (per JEDEC J-STD-020) | MSL1 (per JEDEC J-STD-020) |
| FET Type | β | N-Channel |
| Continuous Drain Current (ID) at TA=25Β°C | β | 35 A |
| Continuous Drain Current (ID) at TC=25Β°C | β | 40 A |
| On-State Resistance RDS(on) max at VGS=10 V | β | 1.1 mΞ© (typical, per datasheet title) |
| Power Dissipation at TA=25Β°C | β | 2.1 W |
| Power Dissipation at TC=25Β°C | β | 69 W |
| Gate Threshold Voltage VGS(th) | β | 1.0 V to 2.0 V (typical 1.5 V) |
| Gate Drive Voltage (recommended) | β | 4.5 V to 10 V |
| Operating Temperature Range | β | -55Β°C to +150Β°C |
| Package | β | PG-TSDSON-8-34 (PQFN 3.3x3.3 mm) |
| Halogen-Free | β | Yes |