IPD082N10N3GATMA1 vs IPB072N15N3GATMA1 Comparison
Detailed side-by-side comparison of IPD082N10N3GATMA1 by Infineon and IPB072N15N3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD082N10N3GATMA1 - 100V N-Channel OptiMOS 3 Power MOSFET | Infineon
IPD082N10N3GATMA1 β ActiveInfineon
IPB072N15N3GATMA1 - 150V 100A N-Ch OptiMOS 3 MOSFET | Infineon
IPB072N15N3GATMA1 β ActiveSpecification Comparison
| Parameter | IPD082N10N3GATMA1 | IPB072N15N3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.14 | $2.84 |
| Part Number | IPD082N10N3GATMA1 | β |
| Manufacturer | Infineon Technologies | β |
| Technology | OptiMOS 3 (Trench N-Channel) | OptiMOS 3 (trench MOSFET) |
| Drain-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID) @ Tc=25Β°C | 80 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| On-Resistance RDS(on) max @ VGS=10 V | 8.2 mΞ© | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/max] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | β |
| Power Dissipation (PD) @ Tc=25Β°C | 125 W | β |
| Operating Junction Temperature | -55Β°C to +175Β°C | β |
| Package / Case | PG-TO252-3 (DPAK), surface mount | β |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 3 (Gate, Drain, Source) | β |
| RoHS Status | Compliant | Compliant |
| Automotive Qualified (AEC-Q101) | Not applicable (industrial/consumer grade) | β |
| Lead-Free | Yes | β |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| FET Type | β | N-Channel |
| Drain-Source Voltage (V_DS) | β | 150 V |
| Continuous Drain Current (I_D, Tc=25C) | β | 100 A |
| Continuous Drain Current (I_D, Tc=100C) | β | [DATA_NEEDED: I_D at Tc=100C] |
| Pulsed Drain Current (I_DM) | β | [DATA_NEEDED: pulsed I_DM] |
| Maximum Power Dissipation (P_D, Tc=25C) | β | 300 W |
| R_DS(on) typical at VGS=10V | β | 7.2 mOhm |
| R_DS(on) max at VGS=10V | β | [DATA_NEEDED: max R_DS(on) at VGS=10V] |
| Gate-Source Voltage (V_GS) max | β | +/-20 V |
| Gate Threshold Voltage (V_GS(th)) | β | [DATA_NEEDED: V_GS(th) typical] |
| Total Gate Charge (Q_g) | β | [DATA_NEEDED: Q_g typical at VGS=10V] |
| Operating Temperature Range | β | -55 C to +175 C |
| Package | β | PG-TO263-3-2 (D2PAK-2, 3 pins + tab) |
| Avalanche Energy Rated | β | Yes (single-pulse E_AS) |
| Intrinsic Body Diode | β | Yes (low Q_rr, sync-rectifier capable) |
| Manufacturer Ordering Code Suffix | β | GATMA1 (tape and reel, 1000 pcs) |