IPD082N10N3GATMA1 vs IPD038N06NF2SATMA1 Comparison
Detailed side-by-side comparison of IPD082N10N3GATMA1 by Infineon and IPD038N06NF2SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD082N10N3GATMA1 - 100V N-Channel OptiMOS 3 Power MOSFET | Infineon
IPD082N10N3GATMA1 β Active
Specification Comparison
| Parameter | IPD082N10N3GATMA1 | IPD038N06NF2SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.14 | $0.95 |
| Part Number | IPD082N10N3GATMA1 | β |
| Manufacturer | Infineon Technologies | β |
| Technology | OptiMOS 3 (Trench N-Channel) | OptiMOS (Trench) |
| Drain-Source Voltage (VDS) | 100 V | 60 V |
| Continuous Drain Current (ID) @ Tc=25Β°C | 80 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) max @ VGS=10 V | 8.2 mΞ© | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/max] | [DATA_NEEDED: VGS(th)] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | β |
| Power Dissipation (PD) @ Tc=25Β°C | 125 W | β |
| Operating Junction Temperature | -55Β°C to +175Β°C | -55Β°C to +175Β°C |
| Package / Case | PG-TO252-3 (DPAK), surface mount | β |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 3 (Gate, Drain, Source) | β |
| RoHS Status | Compliant | Compliant |
| Automotive Qualified (AEC-Q101) | Not applicable (industrial/consumer grade) | β |
| Lead-Free | Yes | β |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| FET Type | β | N-Channel |
| Continuous Drain Current (ID) at TC=25Β°C | β | 120 A |
| Continuous Drain Current (ID) at TA=25Β°C | β | 20 A |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | β | 3.85 mΞ© max |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=4.5V | β | [DATA_NEEDED: RDS(on) at 4.5V] |
| Typical Gate Charge (Qg) at VGS=10V | β | 68 nC |
| Input Capacitance (Ciss) | β | 6700 pF |
| Output Capacitance (Coss) | β | 670 pF |
| Reverse Transfer Capacitance (Crss) | β | 43 pF |
| Power Dissipation (PD) at TA=25Β°C | β | 3 W |
| Power Dissipation (PD) at TC=25Β°C | β | 107 W |
| Package | β | PG-TO252-3 (DPAK) |
| Channel Mode | β | Enhancement |