IPD082N10N3GATMA1 vs IPD30N10S3L34ATMA1 Comparison
Detailed side-by-side comparison of IPD082N10N3GATMA1 by Infineon and IPD30N10S3L34ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD082N10N3GATMA1 - 100V N-Channel OptiMOS 3 Power MOSFET | Infineon
IPD082N10N3GATMA1 β ActiveInfineon
IPD30N10S3L34ATMA1 - 100V 30A N-Channel OptiMOS MOSFET | Infineon
IPD30N10S3L34ATMA1 β ActiveSpecification Comparison
| Parameter | IPD082N10N3GATMA1 | IPD30N10S3L34ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.14 | $0.38 |
| Part Number | IPD082N10N3GATMA1 | β |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | OptiMOS 3 (Trench N-Channel) | β |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) @ Tc=25Β°C | 80 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | 180 A |
| On-Resistance RDS(on) max @ VGS=10 V | 8.2 mΞ© | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/max] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | β |
| Power Dissipation (PD) @ Tc=25Β°C | 125 W | β |
| Operating Junction Temperature | -55Β°C to +175Β°C | -55Β°C to +175Β°C |
| Package / Case | PG-TO252-3 (DPAK), surface mount | β |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 3 (Gate, Drain, Source) | β |
| RoHS Status | Compliant | β |
| Automotive Qualified (AEC-Q101) | Not applicable (industrial/consumer grade) | β |
| Lead-Free | Yes | β |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 (JEDEC J-STD-020, 260Β°C peak reflow) |
| Product Family | β | OptiMOS-T2 |
| Transistor Type | β | N-Channel Enhancement Mode MOSFET |
| Continuous Drain Current (ID, Tc=25Β°C) | β | 30 A |
| Power Dissipation (PD, Tc=25Β°C) | β | 57 W |
| Drain-Source On-Resistance (RDS(on) max) | β | 31 mΞ© @ VGS=10 V |
| Gate-Source Threshold Voltage (VGS(th) typ) | β | 1.7 V (range 1.0 V to 2.5 V) |
| Total Gate Charge (Qg typ) | β | 23 nC |
| Package | β | PG-TO252-3-11 (DPAK-2 / SC-63) |
| Automotive Qualification | β | AEC-Q101 qualified |
| RoHS / REACH | β | Compliant |
| Lead-Free / Halogen-Free | β | Yes / Yes |
| Avalanche Rated | β | 100% Avalanche tested |