IPD082N10N3GATMA1 vs IPD70N10S3L12ATMA1 Comparison

Detailed side-by-side comparison of IPD082N10N3GATMA1 by Infineon and IPD70N10S3L12ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPD70N10S3L12ATMA1 IPD70N10S3L12ATMA1 - 100V 70A OptiMOS-T MOSFET | Infineon

IPD70N10S3L12ATMA1 - 100V 70A OptiMOS-T MOSFET | Infineon

IPD70N10S3L12ATMA1 βœ“ Active

Specification Comparison

Parameter IPD082N10N3GATMA1 IPD70N10S3L12ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.14 $0.78
Part Number IPD082N10N3GATMA1 β€”
Manufacturer Infineon Technologies Infineon Technologies
Technology OptiMOS 3 (Trench N-Channel) β€”
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) @ Tc=25Β°C 80 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] 180 A
On-Resistance RDS(on) max @ VGS=10 V 8.2 mΞ© β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/max] β€”
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] β€”
Power Dissipation (PD) @ Tc=25Β°C 125 W β€”
Operating Junction Temperature -55Β°C to +175Β°C β€”
Package / Case PG-TO252-3 (DPAK), surface mount β€”
Mounting Type Surface Mount Surface Mount
Pin Count 3 (Gate, Drain, Source) 3 (Drain, Gate, Source + tab)
RoHS Status Compliant Compliant (Green Product)
Automotive Qualified (AEC-Q101) Not applicable (industrial/consumer grade) β€”
Lead-Free Yes β€”
MSL Level 1 (per JEDEC J-STD-020) MSL1 (per JEDEC J-STD-020, up to 260 Β°C peak reflow)
Product Family β€” OptiMOS-T
Transistor Type β€” N-Channel MOSFET (Enhancement Mode)
Continuous Drain Current (ID, Tc) β€” 70 A
Power Dissipation (Ptot, Tc) β€” 125 W
On-State Resistance RDS(on) typ @ VGS=10V β€” 11.5 mΞ©
Operating Temperature Range β€” -55 Β°C to +175 Β°C (junction)
Package β€” PG-TO252-3-11 (DPAK)
Automotive Qualification β€” AEC-Q101 qualified
Avalanche Rating β€” 100 % avalanche tested
Avalanche Energy (Single Pulse) β€” [DATA_NEEDED: EAS value]

Datasheets & Resources

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