IPD135N03LGATMA1 vs BSC0906NSATMA1 Comparison

Detailed side-by-side comparison of IPD135N03LGATMA1 by Infineon and BSC0906NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPD135N03LGATMA1 IPD135N03LGATMA1 - 30V 30A N-Ch OptiMOS MOSFET | Infineon

IPD135N03LGATMA1 - 30V 30A N-Ch OptiMOS MOSFET | Infineon

IPD135N03LGATMA1 ✓ Active
Infineon
BSC0906NSATMA1

BSC0906NSATMA1 - 30V 63A OptiMOS N-Channel MOSFET | Infineon

BSC0906NSATMA1 ✓ Active

Specification Comparison

Parameter IPD135N03LGATMA1 BSC0906NSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.22 $0.48
Manufacturer Infineon Technologies
Series OptiMOS™
Transistor Type N-Channel MOSFET
Drain-Source Voltage (VDS) 30 V
Continuous Drain Current (ID) 30 A (Tc)
Power Dissipation (PD) 31 W (Tc)
Package / Case PG-TO252-3 (DPAK), Surface Mount
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] [DATA_NEEDED: VGS(th) typ/min/max]
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at 10V VGS]
Gate Charge (Qg) Ultra-low (per OptiMOS™ family spec)
Output Charge (Qoss) Ultra-low (per OptiMOS™ family spec)
Operating Temperature Range -55°C to +175°C (TJ max typical for OptiMOS) -55C to +150C (junction, typical)
Mounting Type Surface Mount Surface Mount
MSL Level 1 (per JEDEC J-STD-020)
RoHS Status Compliant Compliant
Lead-Free Finish Yes
Qualification Industrial (Infineon OptiMOS™ standard grade)
FET Type N-Channel
Drain-to-Source Voltage (VDS) 30 V
Continuous Drain Current (ID) at Ta 18 A
Continuous Drain Current (ID) at Tc 63 A
Power Dissipation at Ta 2.5 W
Power Dissipation at Tc 30 W
Package PG-TDSON-8-6 (SuperSO8, 5x6 mm)
Technology OptiMOS
RDS(on) max (typical reference) [DATA_NEEDED: RDS(on) max @ VGS=10V]
Total Gate Charge (Qg) [DATA_NEEDED: Qg @ VGS=10V]
Pin Count 8

Datasheets & Resources

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