IPD135N03LGATMA1 vs IPD060N03LGATMA1 Comparison
Detailed side-by-side comparison of IPD135N03LGATMA1 by Infineon and IPD060N03LGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPD135N03LGATMA1 | IPD060N03LGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.22 | $0.20 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOSβ’ | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) | 30 A (Tc) | β |
| Power Dissipation (PD) | 31 W (Tc) | β |
| Package / Case | PG-TO252-3 (DPAK), Surface Mount | PG-TO252-3 (DPAK) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | β |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at 10V VGS] | β |
| Gate Charge (Qg) | Ultra-low (per OptiMOSβ’ family spec) | β |
| Output Charge (Qoss) | Ultra-low (per OptiMOSβ’ family spec) | β |
| Operating Temperature Range | -55Β°C to +175Β°C (TJ max typical for OptiMOS) | β |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 (Unlimited) |
| RoHS Status | Compliant | Compliant |
| Lead-Free Finish | Yes | β |
| Qualification | Industrial (Infineon OptiMOSβ’ standard grade) | β |
| Product Family | β | OptiMOS 30V |
| Polarity / Channel Type | β | N-Channel |
| Continuous Drain Current (ID, TC=25C) | β | 50 A |
| Pulsed Drain Current (IDM, TC=25C, tp<=10us) | β | 200 A |
| Gate-Source Voltage (VGS) | β | +/-20 V |
| Gate Threshold Voltage (VGS(th), typ) | β | 1.7 V |
| On-State Resistance (RDS(on), VGS=10V) | β | 6.0 mOhm (typ) / 7.5 mOhm (max) |
| On-State Resistance (RDS(on), VGS=4.5V) | β | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Total Gate Charge (Qg, typ) | β | 21 nC |
| Output Charge (Qoss, typ) | β | [DATA_NEEDED: Qoss] |
| Reverse Recovery Charge (Qrr) | β | [DATA_NEEDED: Qrr] |
| Power Dissipation (PD, TC=25C) | β | 56 W |
| Operating Junction Temperature | β | -55C to +175C |
| Thermal Resistance Junction-to-Case (RthJC, max) | β | 2.5 C/W |
| Thermal Resistance Junction-to-Ambient (RthJA, max, std PCB) | β | 62 C/W |
| Lead-Free / Halogen-Free | β | Yes / Yes |
| Packing | β | Tape & Reel (T/R), 2500 per reel |
| AEC-Q101 / Automotive Grade | β | Not qualified |
| Technology / Generation | β | OptiMOS 30V, trench MOSFET |