IPD30N06S2L13ATMA4 vs IPD30N10S3L34ATMA2 Comparison
Detailed side-by-side comparison of IPD30N06S2L13ATMA4 by Infineon and IPD30N10S3L34ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD30N06S2L13ATMA4 - 55V 30A N-Channel OptiMOS MOSFET | Infineon
IPD30N06S2L13ATMA4 β ActiveSpecification Comparison
| Parameter | IPD30N06S2L13ATMA4 | IPD30N10S3L34ATMA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.48 | $0.92 |
| Manufacturer | Infineon Technologies | β |
| Part Family | OptiMOS | β |
| Channel Type | N-Channel | β |
| Mode | Enhancement | β |
| Drain-Source Voltage (Vds) | 55 V | β |
| Continuous Drain Current (Id) | 30 A (Tc) | β |
| Power Dissipation (Pd) | 136 W (Tc) | β |
| Package | PG-TO252-3-11 (DPAK) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55 Β°C to +175 Β°C (Tj) | β |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| MSL (Moisture Sensitivity Level) | MSL1 (per JEDEC J-STD-020, up to 260 Β°C peak reflow) | β |
| Lead-Free / RoHS | Yes (Green Package) | β |
| Avalanche Tested | 100 % production-tested | β |
| Technology | Planar (OptiMOS) | OptiMOS-T (trench) |
| On-State Resistance (Rds(on)) | [DATA_NEEDED: exact typ/max Rds(on) at Vgs=10V and at Vgs=4.5V] | β |
| Gate-Source Threshold (Vgs(th)) | Logic-level (typ [DATA_NEEDED: Vth typ/min/max]) | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg @ Vgs=10V, Id=30A] | β |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss typ at Vds=25V] | β |
| Diode Reverse Recovery (trr) | [DATA_NEEDED: trr typ] | β |
| Pin Count | 3 (Drain tab + Gate + Source) | β |
| Tape and Reel Packaging | Yes (T&R per IEC 60286-3) | β |
| FET Type | β | N-Channel |
| Drain-Source Voltage (V_DS) | β | 100 V |
| Continuous Drain Current (I_D, Tc) | β | 30 A |
| Pulsed Drain Current (I_DM) | β | 180 A |
| Power Dissipation (P_D, Tc) | β | 57 W |
| R_DS(on) max at V_GS=10V | β | 31 mOhm (typ) |
| Gate Threshold Voltage V_GS(th) max | β | 2.4 V |
| Total Gate Charge (Qg) max | β | 31 nC |
| Operating Junction Temperature | β | -55 C to +175 C |
| Package / Supplier Device Package | β | PG-TO252-3-11 (DPAK) |
| Pin / Tab Count | β | 3 (2 + Tab) |
| MSL Level | β | [DATA_NEEDED: MSL level] |
| RoHS Status | β | Compliant |