IPD30N10S3L34ATMA1 vs BSC077N12NS3GATMA1 Comparison
Detailed side-by-side comparison of IPD30N10S3L34ATMA1 by Infineon and BSC077N12NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD30N10S3L34ATMA1 - 100V 30A N-Channel OptiMOS MOSFET | Infineon
IPD30N10S3L34ATMA1 β ActiveInfineon
BSC077N12NS3GATMA1
BSC077N12NS3GATMA1 - 120V OptiMOS 3 N-Ch MOSFET, 7.7mΞ© | Infineon
BSC077N12NS3GATMA1 β ActiveSpecification Comparison
| Parameter | IPD30N10S3L34ATMA1 | BSC077N12NS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.38 | $0.71 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-T2 | β |
| Transistor Type | N-Channel Enhancement Mode MOSFET | N-Channel MOSFET (enhancement-mode trench) |
| Drain-Source Voltage (VDS) | 100 V | 120 V |
| Continuous Drain Current (ID, Tc=25Β°C) | 30 A | β |
| Pulsed Drain Current (IDM) | 180 A | [DATA_NEEDED: IDM] |
| Power Dissipation (PD, Tc=25Β°C) | 57 W | β |
| Drain-Source On-Resistance (RDS(on) max) | 31 mΞ© @ VGS=10 V | β |
| Gate-Source Threshold Voltage (VGS(th) typ) | 1.7 V (range 1.0 V to 2.5 V) | β |
| Total Gate Charge (Qg typ) | 23 nC | β |
| Operating Junction Temperature | -55Β°C to +175Β°C | -55C to +150C |
| Package | PG-TO252-3-11 (DPAK-2 / SC-63) | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | β |
| MSL Level | 1 (JEDEC J-STD-020, 260Β°C peak reflow) | 1 |
| RoHS / REACH | Compliant | β |
| Lead-Free / Halogen-Free | Yes / Yes | β |
| Avalanche Rated | 100% Avalanche tested | β |
| Part Family | β | OptiMOS 3 (120 V) |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS max] |
| Continuous Drain Current (ID) at Ta | β | 13.4 A |
| Continuous Drain Current (ID) at Tc | β | 98 A |
| On-State Resistance RDS(on) max @ VGS=10V | β | 7.7 mΞ© |
| Gate Threshold Voltage VGS(th) typ | β | 2.5 V |
| Total Gate Charge Qg typ | β | [DATA_NEEDED: Qg] |
| Power Dissipation (PD) at Tc | β | 139 W |
| Pin Count | β | 8 |
| RoHS Status | β | Compliant |
| Automotive Grade | β | Yes (per Infineon part number suffix / datasheet) |