IPD30N10S3L34ATMA1 vs IPD082N10N3GATMA1 Comparison
Detailed side-by-side comparison of IPD30N10S3L34ATMA1 by Infineon and IPD082N10N3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD30N10S3L34ATMA1 - 100V 30A N-Channel OptiMOS MOSFET | Infineon
IPD30N10S3L34ATMA1 β ActiveInfineon
IPD082N10N3GATMA1 - 100V N-Channel OptiMOS 3 Power MOSFET | Infineon
IPD082N10N3GATMA1 β ActiveSpecification Comparison
| Parameter | IPD30N10S3L34ATMA1 | IPD082N10N3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.38 | $1.14 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-T2 | β |
| Transistor Type | N-Channel Enhancement Mode MOSFET | β |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID, Tc=25Β°C) | 30 A | β |
| Pulsed Drain Current (IDM) | 180 A | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD, Tc=25Β°C) | 57 W | β |
| Drain-Source On-Resistance (RDS(on) max) | 31 mΞ© @ VGS=10 V | β |
| Gate-Source Threshold Voltage (VGS(th) typ) | 1.7 V (range 1.0 V to 2.5 V) | β |
| Total Gate Charge (Qg typ) | 23 nC | β |
| Operating Junction Temperature | -55Β°C to +175Β°C | -55Β°C to +175Β°C |
| Package | PG-TO252-3-11 (DPAK-2 / SC-63) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | β |
| MSL Level | 1 (JEDEC J-STD-020, 260Β°C peak reflow) | 1 (per JEDEC J-STD-020) |
| RoHS / REACH | Compliant | β |
| Lead-Free / Halogen-Free | Yes / Yes | β |
| Avalanche Rated | 100% Avalanche tested | β |
| Part Number | β | IPD082N10N3GATMA1 |
| Technology | β | OptiMOS 3 (Trench N-Channel) |
| Continuous Drain Current (ID) @ Tc=25Β°C | β | 80 A |
| On-Resistance RDS(on) max @ VGS=10 V | β | 8.2 mΞ© |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical/max] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg typical] |
| Power Dissipation (PD) @ Tc=25Β°C | β | 125 W |
| Package / Case | β | PG-TO252-3 (DPAK), surface mount |
| Pin Count | β | 3 (Gate, Drain, Source) |
| RoHS Status | β | Compliant |
| Automotive Qualified (AEC-Q101) | β | Not applicable (industrial/consumer grade) |
| Lead-Free | β | Yes |